公开(公告)号：US20160300932A1

公开(公告)日：2016-10-13

申请号：US15187430

申请日：2016-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-In Choi ,  Gyeom KIM ,  Hong-Sik YOON ,  Bon-Young KOO ,  Wook-Je KIM

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/66545 ,  H01L29/785 ,  H01L2924/13067

Abstract: A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along the outer periphery of the first region and including an impurity having a concentration, and a liner on the multi-channel active pattern, the liner extending on lateral surfaces of the first region and not extending on a top surface of the first region. Related fabrication methods are also described.

Abstract translation: 半导体器件包括衬底上的栅极图案，栅极图案下方的跨越栅极图案的多通道有源图案，并且具有不与栅极图案重叠的第一区域和与栅极图案重叠的第二区域， 多通道活性图案沿着第一区域的外周边并且包括具有浓度的杂质和多通道活性图案上的衬垫，衬垫在第一区域的侧表面上延伸并且不在第一区域的顶表面上延伸 第一个地区。 还描述了相关的制造方法。

公开(公告)号：US20130228870A1

公开(公告)日：2013-09-05

申请号：US13842002

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Woo HYUN ,  Yu-Gyun SHIN ,  Sun-Ghil LEE ,  Hong-Sik YOON

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second part of the source/drain of the first region is different from the cross-sectional shape of the second part of the source/drain of the second region.

Abstract translation: 半导体器件包括衬底，第一区域和第二区域。 第一区域和第二区域中的每一个包括沟槽，包括具有第一部分和第二部分的源极/漏极的外延层，第一部分从衬底的顶表面延伸到源极/漏极的顶表面， 第二部分从衬底的顶表面延伸到沟槽中的源极/漏极的底表面。 第一区域的源极/漏极的第一部分的截面形状与第二区域的源极/漏极的第一部分的横截面形状相同。 第一区域的源极/漏极的第二部分的截面形状与第二区域的源极/漏极的第二部分的横截面形状不同。