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    Semiconductor devices
    1.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11271038B2

    公开(公告)日：2022-03-08

    申请号：US17027980

    申请日：2020-09-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myoungsu Son ,  Seung Pil Ko ,  Jung Hyuk Lee ,  Shinhee Han ,  Gwan-Hyeob Koh ,  Yoonjong Song

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L23/522

    Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.

    Semiconductor devices
    2.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11158671B2

    公开(公告)日：2021-10-26

    申请号：US16435915

    申请日：2019-06-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong-Jae Kim ,  Kil-Ho Lee ,  Dae-Eun Jeong ,  Gwan-Hyeob Koh

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L21/768

    Abstract: A semiconductor device may include a conductive structure on a substrate, a contact plug on the conductive structure, and a magnetic tunnel junction structure on the contact plug. A lower surface of the contact plug may have an area greater than that of an upper surface thereof, and the contact plug may include a capping pattern at least partially covering an upper surface of the conductive structure, a conductive pattern on the capping pattern, and an amorphous metal pattern on the conductive pattern.

    Semiconductor devices
    4.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10818727B2

    公开(公告)日：2020-10-27

    申请号：US16161370

    申请日：2018-10-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myoungsu Son ,  Seung Pil Ko ,  Jung Hyuk Lee ,  Shinhee Han ,  Gwan-Hyeob Koh ,  Yoonjong Song

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L23/522

    Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.

    Semiconductor devices and methods of manufacturing the same
    8.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US10249820B2

    公开(公告)日：2019-04-02

    申请号：US15366574

    申请日：2016-12-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwang-Woo Lee ,  Dae-Hwan Kang ,  Gwan-Hyeob Koh

    IPC: H01L27/24 ,  H01L45/00

    Abstract: The semiconductor device includes a plurality of first conductive patterns on a substrate, a first selection pattern on each of the plurality of first conductive patterns, a first structure on the first selection pattern, a plurality of second conductive patterns on the first structures, a second selection pattern on each of the plurality of second conductive patterns, a second structure on the second selection pattern, and a plurality of third conductive patterns on the second structures. Each of the plurality of first conductive patterns may extend in a first direction. The first structure may include a first variable resistance pattern and a first heating electrode. The first variable resistance pattern and the first heating electrode may contact each other to have a first contact area therebetween. Each of the plurality of second conductive patterns may extend in a second direction crossing the first direction. The second structure may include a second variable resistance pattern and a second heating electrode. The second variable resistance pattern and the second heating electrode may contact each other to have a second contact area therebetween, and the second contact area may be different from the first contact area.

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