公开(公告)号：US20190371998A1

公开(公告)日：2019-12-05

申请号：US16540146

申请日：2019-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Shik Kim ,  Jeong-Heon Park ,  Gwan-Hyeob Koh

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/08 ,  H01L29/417 ,  H01L43/02 ,  H01L27/22

Abstract: In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.

公开(公告)号：US10777737B2

公开(公告)日：2020-09-15

申请号：US16540146

申请日：2019-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Shik Kim ,  Jeong-Heon Park ,  Gwan-Hyeob Koh

IPC: H01L29/82 ,  H01L43/00 ,  G11C11/00 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L29/417

Abstract: In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.

公开(公告)号：US11659770B2

公开(公告)日：2023-05-23

申请号：US17004637

申请日：2020-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Shik Kim ,  Jeong-Heon Park ,  Gwan-Hyeob Koh

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L29/417

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L29/41791 ,  H01L43/02 ,  H01L43/08

Abstract: In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.

公开(公告)号：US10388859B2

公开(公告)日：2019-08-20

申请号：US15856256

申请日：2017-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Shik Kim ,  Jeong-Heon Park ,  Gwan-Hyeob Koh

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L29/417

Abstract: In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.

公开(公告)号：US10224086B2

公开(公告)日：2019-03-05

申请号：US15816810

申请日：2017-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Shik Kim ,  Suk-Soo Pyo ,  Gwan-Hyeob Koh

IPC: G11C7/04 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08

Abstract: A memory device includes at least one reference cell and multiple memory cells. A method of operating the memory device may include detecting a temperature of the memory device and controlling a level of a first read signal applied to the at least one reference cell in accordance with a result of the detecting of the temperature. The method may also include comparing a first sensing value sensed by applying the first read signal to the at least one reference cell with a second sensing value sensed by applying a second read signal to a selected memory cell among the multiple memory cells.