公开(公告)号：US20200051976A1

公开(公告)日：2020-02-13

申请号：US16290199

申请日：2019-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok HA ,  Hyun Seung SONG ,  Hyo Jin KIM ,  Kyoung Mi PARK ,  Guk Il AN

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/308

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US20240186321A1

公开(公告)日：2024-06-06

申请号：US18436812

申请日：2024-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok HA ,  Hyun Seung SONG ,  Hyo Jin KIM ,  Kyoung Mi PARK ,  Guk Il AN

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US20230053251A1

公开(公告)日：2023-02-16

申请号：US17977031

申请日：2022-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok HA ,  Hyun Seung SONG ,  Hyo Jin KIM ,  Kyoung Mi PARK ,  Guk Il AN

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US20250098292A1

公开(公告)日：2025-03-20

申请号：US18966327

申请日：2024-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Seok HA ,  Hyun Seung SONG ,  Hyo Jin KIM ,  Kyoung Mi PARK ,  Guk Il AN

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US20240014288A1

公开(公告)日：2024-01-11

申请号：US18369450

申请日：2023-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guk Il AN ,  Keun Hwi CHO ,  Dae Won HA ,  Seung Seok HA

IPC: H01L23/522 ,  H01L27/088 ,  H01L23/528 ,  H01L29/417

CPC classification number: H01L23/5223 ,  H01L27/0886 ,  H01L23/5283 ,  H01L29/41791

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.

公开(公告)号：US20200013871A1

公开(公告)日：2020-01-09

申请号：US16425337

申请日：2019-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guk Il AN ,  Keun Hwi CHO ,  Dae Won HA ,  Seung Seok HA

IPC: H01L29/51 ,  H01L23/522 ,  H01L49/02 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.

公开(公告)号：US20220352342A1

公开(公告)日：2022-11-03

申请号：US17838573

申请日：2022-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guk Il AN ,  Keun Hwi CHO ,  Dae Won HA ,  Seung Seok HA

IPC: H01L29/51 ,  H01L23/522 ,  H01L27/088 ,  H01L29/78 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.

公开(公告)号：US20210167184A1

公开(公告)日：2021-06-03

申请号：US17176226

申请日：2021-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guk Il AN ,  Keun Hwi CHO ,  Dae Won HA ,  Seung Seok HA

IPC: H01L29/51 ,  H01L27/088 ,  H01L23/522 ,  H01L49/02 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.

公开(公告)号：US20210013200A1

公开(公告)日：2021-01-14

申请号：US17036355

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok HA ,  Hyun Seung SONG ,  Hyo Jin KIM ,  Kyoung Mi PARK ,  Guk Il AN

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.