公开(公告)号：US10418326B2

公开(公告)日：2019-09-17

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.

公开(公告)号：US20180158781A1

公开(公告)日：2018-06-07

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76859 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5283 ,  H01L23/53209

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.

公开(公告)号：US10304734B2

公开(公告)日：2019-05-28

申请号：US16046081

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  Jong Min Baek ,  Sang Shin Jang ,  Byung Hee Kim ,  Vietha Nguyen ,  Nae In Lee ,  Woo Jin Lee ,  Eun Ji Jung ,  Kyu Hee Han

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

公开(公告)号：US10388563B2

公开(公告)日：2019-08-20

申请号：US15668029

申请日：2017-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rak Hwan Kim ,  Byung Hee Kim ,  Sang Bom Kang ,  Jong Jin Lee ,  Eun Ji Jung

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485

Abstract: A semiconductor device includes a lower layer, an upper layer on the lower layer, a contact between the lower layer and the upper layer, the contact electrically connects the lower layer and the upper layer, a capping pattern wrapping around the contact and covering an upper surface of the contact, a barrier layer wrapping around the capping pattern and covering a lower surface of the capping pattern and a lower surface of the contact, and an interlayer insulating layer between the lower layer and the upper layer, the interlayer insulating layer wrapping around the barrier layer and exposing an upper surface of the capping pattern, wherein the capping pattern includes a material having an etching selectivity with respect to an oxide.

公开(公告)号：US10062609B2

公开(公告)日：2018-08-28

申请号：US15393506

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  Jong Min Baek ,  Sang Shin Jang ,  Byung Hee Kim ,  Vietha Nguyen ,  Nae In Lee ,  Woo Jin Lee ,  Eun Ji Jung ,  Kyu Hee Han

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76883 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L2221/1021

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.