公开(公告)号：US10418326B2

公开(公告)日：2019-09-17

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.

公开(公告)号：US09873622B2

公开(公告)日：2018-01-23

申请号：US14061203

申请日：2013-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Kang ,  Sung Soo Han ,  Pil Jin Yoo ,  Du-yeol Ryu ,  Young Hun Kim ,  Seon Ju Yeo

IPC: B29C67/20 ,  C02F1/44 ,  B01D67/00 ,  B01D69/02 ,  B01D69/10 ,  B01D69/12 ,  B01D69/14 ,  B01D71/02 ,  B01D71/80

CPC classification number: C02F1/44 ,  B01D67/0006 ,  B01D67/0009 ,  B01D67/003 ,  B01D67/0058 ,  B01D67/0079 ,  B01D67/0088 ,  B01D67/0093 ,  B01D69/02 ,  B01D69/10 ,  B01D69/12 ,  B01D69/125 ,  B01D69/148 ,  B01D71/021 ,  B01D71/024 ,  B01D71/028 ,  B01D71/80 ,  B01D2323/28 ,  B01D2323/283 ,  B01D2323/46 ,  B01D2325/021 ,  B01D2325/08 ,  B01D2325/12 ,  B01D2325/24 ,  B29C67/202

Abstract: A hybrid porous structured material may include a matrix including a plurality of first pores interconnected in three dimensions, and a porous material including second pores and filling wholly or partially each of the plurality of the first pores.

公开(公告)号：US20200098681A1

公开(公告)日：2020-03-26

申请号：US16381243

申请日：2019-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Hun Kim ,  Jae Seok YANG ,  Hae Wang LEE

IPC: H01L23/528 ,  H01L23/532 ,  H01L29/417

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, a buried conductive layer disposed adjacent to the active region on the substrate and extending in the first direction, a gate electrode intersecting the active region and extending in a second direction crossing the first direction, a source/drain layer disposed on the active region on one side of the gate electrode, a gate isolation pattern disposed on the buried conductive layer so as to be disposed adjacent to one end of the gate electrode, and extending in the first direction, and a contact plug disposed on the source/drain layer, electrically connected to the buried conductive layer, and in contact with the gate isolation pattern.

公开(公告)号：US20180158781A1

公开(公告)日：2018-06-07

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76859 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5283 ,  H01L23/53209

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.