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公开(公告)号：US20220028792A1
公开(公告)日：2022-01-27
申请号：US17384023
申请日：2021-07-23
Inventor： Youngjae KANG , SangWoon LEE , Joungeun YOO , Duseop YOON
IPC: H01L23/532 , H01L23/528 , H01L29/45 , H01L21/285
Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm: Mn+1AXn Formula 1 In Formula 1, M, A, X, and n are as described in the specification.
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Patent Agency Ranking
公开(公告)号：US20240038664A1
公开(公告)日：2024-02-01
申请号：US18486574
申请日：2023-10-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joungeun YOO , Youngjae KANG , Duseop YOON
IPC: H01L23/532 , C22C29/14
CPC classification number: H01L23/53209 , H01L23/53257 , C22C29/14 , B22F2302/35
Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
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公开(公告)号：US20240222432A1
公开(公告)日：2024-07-04
申请号：US18401855
申请日：2024-01-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joungeun YOO , Duseop YOON , Kyung-Eun BYUN , Minsu SEOL
IPC: H01L29/06 , H01L29/417 , H01L29/786
CPC classification number: H01L29/0673 , H01L29/41725 , H01L29/78696
Abstract: A semiconductor device may include a two-dimensional (2D) material layer having semiconductor characteristics, and a source electrode, a drain electrode, and a gate electrode spaced apart from one another on the 2D material layer. At least one of the source electrode and the drain electrode may be in contact with the 2D material layer and may include an alloy layer that may be amorphous.
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4.发明公开公开(公告)号：US20240021683A1
公开(公告)日：2024-01-18
申请号：US18152976
申请日：2023-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Duseop YOON , Junyoung Kwon , Minsu Seol , Minseok Yoo , Kyung-Eun Byun
IPC: H01L29/417 , H01L29/40 , H01L29/45
CPC classification number: H01L29/41733 , H01L29/401 , H01L29/45 , H01L29/24
Abstract: A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer. The semiconductor device may be manufactured by a method including forming metal islands on a two-dimensional material layer using a redox method and forming a metal layer covering the metal islands on the two-dimensional material layer.
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5.发明公开公开(公告)号：US20230343709A1
公开(公告)日：2023-10-26
申请号：US18342145
申请日：2023-06-27
Inventor： Youngjae KANG , SangWoon LEE , Joungeun YOO , Duseop YOON
IPC: H01L23/532 , H01L21/285 , H01L23/528 , H01L29/45
CPC classification number: H01L23/53204 , H01L21/2855 , H01L23/5283 , H01L29/45
Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 µΩ·cm:
M
n+1
AX
n
Formula 1
In Formula 1, M, A, X, and n are as described in the specification.-
公开(公告)号：US20220068824A1
公开(公告)日：2022-03-03
申请号：US17376624
申请日：2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joungeun YOO , Youngjae KANG , Duseop YOON
IPC: H01L23/532
Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
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