公开(公告)号：US20240038664A1

公开(公告)日：2024-02-01

申请号：US18486574

申请日：2023-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Youngjae KANG ,  Duseop YOON

IPC: H01L23/532 ,  C22C29/14

CPC classification number: H01L23/53209 ,  H01L23/53257 ,  C22C29/14 ,  B22F2302/35

Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

公开(公告)号：US20250098558A1

公开(公告)日：2025-03-20

申请号：US18828335

申请日：2024-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Minwoo CHOI ,  Youngjae KANG ,  Kiyeon YANG ,  Changseung LEE

IPC: H10N70/00 ,  G11C13/00 ,  H10B63/00

Abstract: A chalcogenide-based memory material may include a ternary semiconductor compound having a composition represented by XaY′bSec, wherein the chalcogenide-based memory material may have an ovonic threshold-switching (OTS) characteristic, and a threshold voltage of the chalcogenide-based memory material may change according to a polarity and an intensity of an applied voltage. In XaY′bSec, X≠Y, a+b+c=1, a>0.12, b>0.18, c≥0.4, and X and Y′ independently may be different ones of In, Sb, Ga, Sn, Al, Ge, Si, and P. A memory device may include the chalcogenide-based memory material. An electronic apparatus may include the memory device.

公开(公告)号：US20220028792A1

公开(公告)日：2022-01-27

申请号：US17384023

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Youngjae KANG ,  SangWoon LEE ,  Joungeun YOO ,  Duseop YOON

IPC: H01L23/532 ,  H01L23/528 ,  H01L29/45 ,  H01L21/285

Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm: Mn+1AXn  Formula 1 In Formula 1, M, A, X, and n are as described in the specification.

公开(公告)号：US20230343709A1

公开(公告)日：2023-10-26

申请号：US18342145

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Youngjae KANG ,  SangWoon LEE ,  Joungeun YOO ,  Duseop YOON

IPC: H01L23/532 ,  H01L21/285 ,  H01L23/528 ,  H01L29/45

CPC classification number: H01L23/53204 ,  H01L21/2855 ,  H01L23/5283 ,  H01L29/45

Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 µΩ·cm:








M

n+1




AX

n





­­­Formula 1







In Formula 1, M, A, X, and n are as described in the specification.

公开(公告)号：US20220068824A1

公开(公告)日：2022-03-03

申请号：US17376624

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Youngjae KANG ,  Duseop YOON

IPC: H01L23/532

Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.