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    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY
    3.
    发明申请
    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY 审中-公开

    公开(公告)号：US20200303374A1

    公开(公告)日：2020-09-24

    申请号：US16894045

    申请日：2020-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deepak SHARMA ,  Hyun-jong LEE ,  Raheel AZMAT ,  Chul-hong PARK ,  Sang-jun PARK

    IPC: H01L27/088 ,  H01L27/02 ,  H01L23/528 ,  H01L27/092 ,  H01L29/66

    Abstract: Provided is an integrated circuit including at least one cell, the at least one cell includes first and second active regions spaced apart from each other, a dummy region disposed between the first and second active regions, at least one first active fin disposed in the first active region and extending in a first direction, at least one second active fin extending along the first direction over the entire length of the second active region, and an active gate line extending in a second direction that is substantially perpendicular to the first direction, wherein the active gate line vertically overlaps the first active region and the dummy region and does not vertically overlap the second active region.

    METHOD AND SYSTEM FOR MITIGATING UNWANTED AUDIO NOISE IN A VOICE ASSISTANT-BASED COMMUNICATION ENVIRONMENT
    5.
    发明公开
    METHOD AND SYSTEM FOR MITIGATING UNWANTED AUDIO NOISE IN A VOICE ASSISTANT-BASED COMMUNICATION ENVIRONMENT 审中-公开

    公开(公告)号：US20230215457A1

    公开(公告)日：2023-07-06

    申请号：US18084081

    申请日：2022-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Abhinav GABA ,  Akul TANEJA ,  Deepak SHARMA ,  Raja SINGHAL

    IPC: G10L25/30 ,  G10L21/0208

    CPC classification number: G10L25/30 ,  G10L21/0208 ,  G10L2021/02082

    Abstract: A method for mitigating unwanted audio noise in internet of things (IoT) based communication environment is provided. The method includes identifying and pairing one or more IoT devices with a voice assistant device, and then dividing the one or more paired IoT devices into a plurality of clusters. The method further includes detecting a user's location with respect to a location of the voice assistant device and then determining a cluster among the plurality of clusters corresponding to the user's location based on the detected user's location and thereafter using a recurrent neural networks (RNN) model, predicting an optimal sound output of the voice assistance device that is audible at the detected user's location. The method furthermore includes correcting the predicted optimal sound output of the voice assistance device using a sound parameter value associated with the determined cluster and a phase shift of the predicted optimal sound output.

    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY
    6.
    发明申请
    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY 审中-公开

    公开(公告)号：US20200294999A1

    公开(公告)日：2020-09-17

    申请号：US16887331

    申请日：2020-05-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deepak SHARMA ,  Hyun-jong LEE ,  Raheel AZMAT ,  Chul-hong PARK ,  Sang-jun PARK

    IPC: H01L27/088 ,  H01L27/02 ,  H01L23/528 ,  H01L27/092 ,  H01L29/66

    Abstract: Provided is an integrated circuit including at least one cell, the at least one cell includes first and second active regions spaced apart from each other, a dummy region disposed between the first and second active regions, at least one first active fin disposed in the first active region and extending in a first direction, at least one second active fin extending along the first direction over the entire length of the second active region, and an active gate line extending in a second direction that is substantially perpendicular to the first direction, wherein the active gate line vertically overlaps the first active region and the dummy region and does not vertically overlap the second active region.

    INTEGRATED CIRCUIT (IC) DEVICES INCLUDING CROSS GATE CONTACTS
    7.
    发明申请
    INTEGRATED CIRCUIT (IC) DEVICES INCLUDING CROSS GATE CONTACTS 审中-公开

    公开(公告)号：US20180090492A1

    公开(公告)日：2018-03-29

    申请号：US15473913

    申请日：2017-03-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Rajeev RANJAN ,  Deepak SHARMA ,  Subhash KUCHANURI ,  Chul Hong PARK ,  Jae Seok YANG ,  Kwan Young CHUN

    IPC: H01L27/088 ,  H01L23/528 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L23/522

    Abstract: Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.

    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY
    8.
    发明申请
    INTEGRATED CIRCUIT AND STANDARD CELL LIBRARY 审中-公开
    集成电路和标准单元库

    公开(公告)号：US20170033101A1

    公开(公告)日：2017-02-02

    申请号：US15060829

    申请日：2016-03-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deepak SHARMA ,  Hyun-jong LEE ,  Raheel AZMAT ,  Chul-hong PARK ,  Sang-jun PARK

    IPC: H01L27/088 ,  H01L23/528 ,  H01L27/02

    CPC classification number: H01L27/0886 ,  H01L21/823828 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/6681

    Abstract: Provided is an integrated circuit including at least one cell, the at least one cell includes first and second active regions spaced apart from each other, a dummy region disposed between the first and second active regions, at least one first active fin disposed in the first active region and extending in a first direction, at least one second active fin extending along the first direction over the entire length of the second active region, and an active gate line extending in a second direction that is substantially perpendicular to the first direction, wherein the active gate line vertically overlaps the first active region and the dummy region and does not vertically overlap the second active region.

    Abstract translation: 提供了包括至少一个单元的集成电路，所述至少一个单元包括彼此间隔开的第一和第二有源区，设置在第一和第二有源区之间的虚拟区，设置在第一和第二有源区中的至少一个第一有源鳍 有源区并且在第一方向上延伸，在第二有源区的整个长度上沿着第一方向延伸的至少一个第二有源鳍，以及沿基本上垂直于第一方向的第二方向延伸的有源栅极线，其中 有源栅极线垂直地与第一有源区和虚拟区重叠，并且不垂直地与第二有源区重叠。

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