公开(公告)号：US11538632B2

公开(公告)日：2022-12-27

申请号：US17368037

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol Park ,  Daejin Yang ,  Doh Won Jung ,  Taewon Jeong ,  Giyoung Jo

IPC: H01G4/12 ,  H01B3/12 ,  H01G4/30 ,  H01B19/00

Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1

公开(公告)号：US10937857B2

公开(公告)日：2021-03-02

申请号：US16541883

申请日：2019-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjun Kim ,  Doh Won Jung ,  Chan Kwak ,  Ki Hong Kim ,  Daejin Yang ,  Chang Soo Lee

IPC: H01L49/02

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

公开(公告)号：US10475583B2

公开(公告)日：2019-11-12

申请号：US15875386

申请日：2018-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Kwak ,  Hyun Sik Kim ,  Jong Wook Roh ,  Kyoung-Seok Moon ,  Hyeon Cheol Park ,  Yoon Chul Son ,  Daejin Yang ,  Doh Won Jung ,  Youngjin Cho

IPC: H01G4/12 ,  C04B35/46 ,  H01G4/30 ,  H01G4/14 ,  C04B35/47 ,  C04B35/628 ,  H01C7/00 ,  H01C7/10 ,  H01C7/18 ,  H01C17/065 ,  H01G4/248 ,  H01G4/232

Abstract: A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

公开(公告)号：US11823838B2

公开(公告)日：2023-11-21

申请号：US15908229

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Jong Wook Roh ,  Daejin Yang ,  Chan Kwak ,  Hyungjun Kim ,  Woojin Lee

IPC: H01G4/12 ,  H01G4/30 ,  C01G33/00 ,  C04B35/495 ,  H01G4/33 ,  C04B35/468 ,  H01G4/232 ,  H01G4/242

CPC classification number: H01G4/1281 ,  C01G33/006 ,  C04B35/4682 ,  C04B35/495 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/30 ,  H01G4/33 ,  C01P2002/34 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/78 ,  C01P2004/03 ,  C01P2004/24 ,  C01P2006/40 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3255 ,  C04B2235/5292 ,  C04B2235/768 ,  C04B2235/80 ,  C04B2235/85 ,  H01G4/232 ,  H01G4/242

Abstract: A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

公开(公告)号：US11664414B2

公开(公告)日：2023-05-30

申请号：US17148787

申请日：2021-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjun Kim ,  Doh Won Jung ,  Chan Kwak ,  Ki Hong Kim ,  Daejin Yang ,  Chang Soo Lee

IPC: H01L49/02 ,  B32B18/00 ,  H01G4/33 ,  C04B35/495 ,  H01G4/10

CPC classification number: H01L28/55 ,  B32B18/00 ,  C04B35/495 ,  H01G4/10 ,  H01G4/33 ,  H01L28/60

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

公开(公告)号：US11114245B2

公开(公告)日：2021-09-07

申请号：US16507492

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea Institute of Ceramic Engineering and Technology

Inventor： Chan Kwak ,  Myoung Pyo Chun ,  Hyeon Cheol Park ,  Daejin Yang

IPC: C04B35/47 ,  H01G4/12 ,  H01G4/30 ,  H01G4/228 ,  C04B35/626 ,  C04B35/468 ,  H01G4/005

Abstract: A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

公开(公告)号：US12230444B2

公开(公告)日：2025-02-18

申请号：US17858552

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol Park ,  Daejin Yang ,  Doh Won Jung ,  Taewon Jeong ,  Giyoung Jo

IPC: H01G4/10 ,  C01G33/00 ,  H01G4/30

Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

公开(公告)号：US11358904B2

公开(公告)日：2022-06-14

申请号：US15908193

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Wook Roh ,  Daejin Yang ,  Doh Won Jung ,  Chan Kwak ,  Hyungjun Kim

IPC: C04B35/491 ,  C04B35/468 ,  C04B35/47 ,  C04B35/472 ,  H01G4/10 ,  C01G41/00 ,  C01G41/02 ,  C01G29/00 ,  C01G35/00 ,  C07C211/63 ,  C07C211/01 ,  H01C7/115 ,  C04B35/475 ,  H01G4/12 ,  C04B35/495 ,  H01C7/00

Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

公开(公告)号：US11120944B2

公开(公告)日：2021-09-14

申请号：US16169800

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hyeon Cheol Park ,  Takayoshi Sasaki ,  Minoru Osada ,  Chan Kwak ,  Daejin Yang ,  Doh Won Jung ,  Youngjin Cho

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/005 ,  H01G4/33

Abstract: A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

公开(公告)号：US11037696B2

公开(公告)日：2021-06-15

申请号：US15343541

申请日：2016-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Cheol Park ,  Youngjin Cho ,  Daejin Yang ,  Chan Kwak ,  Kwanghee Kim ,  Weonho Shin ,  Yun Sung Woo

IPC: H01B1/22 ,  H01B3/44 ,  H01L31/0224 ,  H01L29/43 ,  G06F3/041 ,  H01L51/44 ,  H01L51/00

Abstract: A transparent electrode including: a first layer including a thermosetting copolymer including a first repeating unit having an aromatic moiety as a pendant group or incorporated in a backbone of the copolymer and a second repeating unit capable of lowering a curing temperature, a combination of a first polymer including the first repeating unit and a second polymer including the second repeating unit, or a combination thereof; a second layer disposed directly on one side of the first layer, wherein the second layer includes graphene; and a third layer disposed on the second layer, wherein the third layer includes an electrically conductive metal nanowire.