Abstract:
An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.
Abstract:
A semiconductor package includes a substrate having a vent hole extending through the substrate, a semiconductor chip mounted on an upper surface of the substrate, a plurality of solder ball pads formed on a lower surface of the substrate, and an encapsulant covering the upper surface of the substrate, the semiconductor chip, and an entirety of the lower surface of the substrate except for regions in which the solder ball pads are formed.