公开(公告)号：US11670657B2

公开(公告)日：2023-06-06

申请号：US17003224

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Hwan Jeon ,  Doo Won Kwon ,  Chan Ho Park ,  Kyung Rae Byun ,  Dong-Chul Lee ,  Chong Kwang Chang

IPC: H01L27/146 ,  H04N23/10

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685 ,  H04N23/10

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

公开(公告)号：US09696830B2

公开(公告)日：2017-07-04

申请号：US14467546

申请日：2014-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Han Kim ,  Yeong-Seop Lee ,  Seok-Hong Jeong ,  Myung-Sop Lee ,  Kyoung-Suk Oh ,  Jung-Hun Woo ,  Dong-Chul Lee ,  Jong-Hyun Yim ,  Sung-Il Jang ,  Yong-Gu Cho ,  Hyoung-Jun Go ,  Kyoung-Hun Kim ,  Jeong-Eun Kim ,  Hyeon-Beom Kim ,  Dae-Bin Noh ,  Jae-Young Park ,  Eun-Jin Baek ,  Chung-Hee Lee ,  Sung-Ho Jung ,  Jae-Wook Cho

IPC: G06F3/041 ,  G06F3/044 ,  G06F1/16

CPC classification number: G06F3/041 ,  G06F1/1603 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T29/49105

Abstract: Provided is a method of manufacturing a transparent circuit substrate for a touch screen. The method may involve forming an electrode layer on a transparent substrate, stacking a light shielding layer on the transparent substrate such that the light shielding layer is located on an outside of the electrode layer, stacking a mask on the light shielding layer and the electrode layer, forming a conductive layer on the mask, forming connecting lines for connecting the electrode layer and connecting terminals by removing the mask and a portion of the conductive layer, and forming the connecting terminals on the light shielding layer such that the connecting terminals contact the connecting lines.

公开(公告)号：US12080744B2

公开(公告)日：2024-09-03

申请号：US17377792

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Chul Lee ,  Beomsuk Lee ,  Minho Jang ,  Kwansik Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

公开(公告)号：US09508766B2

公开(公告)日：2016-11-29

申请号：US14813182

申请日：2015-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HyunPil Noh ,  Dong-Chul Lee ,  Seokha Lee ,  Chan Park ,  Seungho Shin

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。