公开(公告)号：US20170179164A1

公开(公告)日：2017-06-22

申请号：US15337401

申请日：2016-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SHINIL CHOI ,  HYUNMIN CHO ,  SANGGAB KIM ,  SUNGHOON YANG ,  YUGWANG JEONG ,  BYUNGDU AHN

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2201/123 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L2029/42388 ,  H01L2227/323

Abstract: A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.

公开(公告)号：US20240114734A1

公开(公告)日：2024-04-04

申请号：US18234778

申请日：2023-08-16

Applicant: Samsung Display Co., LTD.

Inventor： JAYBUM KIM ,  MYEONGHO KIM ,  Youngoo KIM ,  KYOUNG SEOK SON ,  SUNGHOON YANG ,  SUNHEE LEE ,  SEUNGHUN LEE

IPC: H10K59/131 ,  H10K59/124

CPC classification number: H10K59/131 ,  H10K59/124

Abstract: A display device includes a first pixel and a second pixel. The light emitting element of the second pixel and the driving circuit are disposed in the second area. The first pixel includes a silicon transistor and an oxide transistor disposed in the second area. The first pixel includes a first sub-light emitting element and a second sub-light emitting element disposed in a first area, and a first sub-pixel circuit and a second sub-pixel circuit disposed in a second area. A first connection wiring connecting a transistor included in the first sub-pixel circuit and the first sub-light emitting element, and a second connection wiring connecting a transistor included in the second sub-pixel circuit and the second sub-light emitting element are disposed on different layers and include a transparent conductive oxide.

公开(公告)号：US20220078926A1

公开(公告)日：2022-03-10

申请号：US17335709

申请日：2021-06-01

Applicant: Samsung Display Co., Ltd.

Inventor： OHJUNE KWON ,  CHANHO MOON ,  JUNGHAN SEO ,  SUNGHOON YANG

IPC: H05K5/00 ,  H05K5/02 ,  B32B3/26 ,  B32B7/12 ,  B32B37/12 ,  B32B38/00

Abstract: A display device includes a support member including a through-hole, a polymer film disposed above a support member, a display panel disposed above a polymer film, a protective layer disposed above a display panel, and an electronic module. The polymer film includes a protrusion portion protruding toward the support member. The electronic module is disposed in a position corresponding to the through-hole and facing the protrusion portion.

公开(公告)号：US20210066418A1

公开(公告)日：2021-03-04

申请号：US16991492

申请日：2020-08-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JUNGHAN SEO ,  WOOYONG SUNG ,  WOOYOUNG KIM ,  SEUNGYONG SONG ,  SUNGHOON YANG ,  KWANHYUCK YOON ,  SEUNGGUN CHAE ,  WONWOO CHOI

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A display apparatus includes a substrate, a display area disposed on the substrate and including a plurality of pixels, a first planarization layer disposed on the substrate, a second planarization layer disposed on the first planarization layer, a pixel-defining layer disposed on the second planarization layer and covering at least one edge of a first electrode of each of the plurality of pixels, a plurality of first holes disposed between the plurality of pixels and spaced apart from the first electrode, and a first etching prevention layer disposed on a bottom surface of each of the first holes and on the first planarization layer. Each of the first holes includes an opening that passes through the second planarization layer and the pixel-defining layer.