公开(公告)号：US09406807B2

公开(公告)日：2016-08-02

申请号：US14290788

申请日：2014-05-29

Applicant: Samsung Display Co., Ltd.

Inventor： Joo-Han Kim ,  Hwa-Dong Jung ,  Wan-Soon Lim ,  Jee-Hun Lim ,  Joo Seok Yeom ,  Tae-Kyung Yim ,  Jae-Hak Lee ,  Hyuk Soon Kwon ,  Hyoung Cheol Lee ,  Jeong-Ju Park ,  Se-Myung Kwon ,  So-Young Koo

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78663 ,  H01L27/1222 ,  H01L27/1285

Abstract: Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Abstract translation: 本发明的示例性实施例公开了一种制造薄膜晶体管阵列面板的方法，其具有缩短的总体处理时间并提供均匀的结晶。 本发明的示例性实施例还公开了一种薄膜晶体管的结晶方法，包括在基板上形成包括第一像素区域，第二像素区域和第三像素区域的半导体层。 结晶方法包括使用微透镜阵列结晶对应于薄膜晶体管的沟道区的半导体层的一部分。

公开(公告)号：US09406630B2

公开(公告)日：2016-08-02

申请号：US14579542

申请日：2014-12-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joo-Han Kim ,  Ki-Yong Song ,  Dong-Ju Yang ,  Hee-Joon Kim ,  Yeo-Geon Yoon ,  Sung-Hen Cho ,  Chang-Hoon Kim ,  Jae-Hong Kim ,  Yu-Gwang Jeong ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Yun-Jong Yeo ,  Shin-Il Choi ,  Ji-Young Park

IPC: H01L23/00 ,  G02F1/1362 ,  H01L27/12

CPC classification number: H01L24/05 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L2224/04042 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/00

Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

公开(公告)号：US09070718B2

公开(公告)日：2015-06-30

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

公开(公告)号：US20130260498A1

公开(公告)日：2013-10-03

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng CHO ,  Ki-Hun JEONG ,  Jun-Ho SONG ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan SHIM

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。