THIN FILM TRANSISTOR HAVING SEMICONDUCTOR WITH DIFFERENT CRYSTALLINITIES AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    THIN FILM TRANSISTOR HAVING SEMICONDUCTOR WITH DIFFERENT CRYSTALLINITIES AND MANUFACTURING METHOD THEREOF 有权
    具有不同晶体结构的半导体薄膜晶体管及其制造方法

    公开(公告)号:US20130260498A1

    公开(公告)日:2013-10-03

    申请号:US13900072

    申请日:2013-05-22

    Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

    Abstract translation: 薄膜晶体管,显示装置及其制造方法。 薄膜晶体管包括控制电极,与控制电极重叠的半导体,以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

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