公开(公告)号：US20130260498A1

公开(公告)日：2013-10-03

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng CHO ,  Ki-Hun JEONG ,  Jun-Ho SONG ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan SHIM

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

公开(公告)号：US08822279B2

公开(公告)日：2014-09-02

申请号：US14036668

申请日：2013-09-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Jae-Hong Kim

IPC: H01L21/84

CPC classification number: H01L29/6675 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/42384

Abstract: A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

Abstract translation: 薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。 栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。 第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

公开(公告)号：US20140024157A1

公开(公告)日：2014-01-23

申请号：US14036668

申请日：2013-09-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Jae-Hong Kim

IPC: H01L29/66

CPC classification number: H01L29/6675 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/42384

Abstract: A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

Abstract translation: 薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。 栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。 第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

公开(公告)号：US09660099B2

公开(公告)日：2017-05-23

申请号：US14920741

申请日：2015-10-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seok-Hwan Bang ,  Hyung-Jun Kim ,  Ji-Man Lim

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02274 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606

Abstract: A thin film transistor substrate includes a gate electrode disposed on a base substrate, an active pattern overlapping the gate electrode, a source metal pattern including both a source electrode disposed on the active pattern and a drain electrode spaced apart from the source electrode, a buffer layer disposed on the source metal pattern and contacting the active pattern, a first passivation layer disposed on the buffer layer and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer.

公开(公告)号：US09070718B2

公开(公告)日：2015-06-30

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

公开(公告)号：US20140151216A1

公开(公告)日：2014-06-05

申请号：US13900231

申请日：2013-05-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Woo Sohn ,  Hyung-Jun Kim

IPC: H01L21/02

CPC classification number: C23C14/564 ,  C23C14/352 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/347 ,  H01J37/3473 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: A sputtering apparatus includes a chamber. A substrate supporting part is disposed in the chamber. A plurality of targets face the substrate supporting part. A target supporting part is disposed under each of the targets to hold the target. A first ground part is disposed between two target supporting parts adjacent to each other and includes a cover separable therefrom. A second ground part is disposed between two target supporting parts adjacent to each other, except for where the first ground part is disposed.

Abstract translation: 溅射装置包括室。 衬底支撑部分设置在腔室中。 多个目标面向基板支撑部。 目标支撑部件设置在每个目标下以保持目标。 第一接地部设置在彼此相邻的两个目标支撑部之间，并且包括可与其分离的盖。 第二接地部设置在彼此相邻的两个目标支撑部之间，除了设置第一接地部分之外。