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    THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME
    1.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME 审中-公开
    薄膜晶体管基板和显示面板

    公开(公告)号：US20160026049A1

    公开(公告)日：2016-01-28

    申请号：US14585984

    申请日：2014-12-30

    Applicant: Samsung Display Co., Ltd.

    Inventor： Seung-Hyun Park ,  Jun-Ho Song ,  Jean-Ho Song

    IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

    CPC classification number: H01L27/1248 ,  G02F1/133707 ,  G02F1/133788 ,  G02F2001/133397 ,  G02F2001/13606

    Abstract: A thin-film transistor substrate includes a base substrate, a gate line, a data line, a thin-film transistor, an organic insulating pattern and a common electrode. The base substrate includes a plurality of pixel areas. The gate line is disposed on the base substrate, and the gate line is extended in a first direction. The data line is disposed on the gate line, and the data line is extended in a second direction crossing the first direction. The thin-film transistor is connected to the gate line and the data line. The organic insulating pattern covers the data line and the thin-film transistor, and the organic insulating pattern includes an opening overlapping with the pixel areas. The common electrode is disposed on the base substrate. Thus, an organic insulating layer in a pixel area may be partially removed, so that a yellowish screen may be prevented, thereto improve a display quality. In addition, an organic insulating pattern may be formed on a data pattern, a coupling capacitance between the data pattern and a common electrode may be prevented or decreased, thereto prevent a data signal delay.

    Abstract translation: 薄膜晶体管基板包括基底基板，栅极线，数据线，薄膜晶体管，有机绝缘图案和公共电极。 基底基板包括多个像素区域。 栅极线设置在基底基板上，栅极线沿第一方向延伸。 数据线设置在栅极线上，并且数据线在与第一方向交叉的第二方向上延伸。 薄膜晶体管连接到栅极线和数据线。 有机绝缘图案覆盖数据线和薄膜晶体管，有机绝缘图案包括与像素区域重叠的开口。 公共电极设置在基底基板上。 因此，可以部分地去除像素区域中的有机绝缘层，从而可以防止黄色屏幕，从而提高显示质量。 此外，可以在数据图案上形成有机绝缘图案，可以防止或减少数据图案和公共电极之间的耦合电容，从而防止数据信号延迟。

    Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof
    2.
    发明授权
    Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof 有权
    具有不同结晶度的半导体的薄膜晶体管及其制造方法

    公开(公告)号：US09070718B2

    公开(公告)日：2015-06-30

    申请号：US13900072

    申请日：2013-05-22

    Applicant: Samsung Display Co., Ltd.

    Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

    IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345

    CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

    Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

    Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

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