公开(公告)号：US20160260749A1

公开(公告)日：2016-09-08

申请号：US14997357

申请日：2016-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Yong KIM ,  Woong-Ki JEON ,  Hyun-Jin KIM ,  Jean-Ho SONG

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/311 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L21/31116 ,  H01L27/124 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/41733 ,  G02F1/136227

Abstract: A thin film transistor substrate includes a switching element comprising a gate electrode electrically connected to a gate line extending in a first direction, an active pattern overlapping with the gate electrode, a source electrode disposed on the active pattern and electrically connected to a data line extending in a second direction crossing the first direction, and a drain electrode spaced apart from the source electrode. The thin film transistor substrate further includes an organic layer disposed on the switching element, a first electrode disposed on the organic layer, and a second electrode overlapping with the first electrode, and electrically connected to the drain electrode. A thickness of the second electrode is thicker than a thickness of the first electrode.

Abstract translation: 薄膜晶体管基板包括开关元件，该开关元件包括电连接到沿第一方向延伸的栅极线的栅电极，与栅电极重叠的有源图案，设置在有源图案上的源极，并电连接到延伸的数据线 在与第一方向交叉的第二方向上，以及与源电极间隔开的漏电极。 薄膜晶体管基板还包括设置在开关元件上的有机层，设置在有机层上的第一电极和与第一电极重叠的第二电极，并与漏电极电连接。 第二电极的厚度比第一电极的厚度厚。

公开(公告)号：US20130149814A1

公开(公告)日：2013-06-13

申请号：US13758716

申请日：2013-02-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Young-Wook LEE ,  Hong-Suk YOO ,  Jean-Ho SONG ,  Jae-Hyoung YOUN ,  Woo-Geun LEE ,  Ki-Won KIM ,  Jong-In KIM

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

Abstract translation: 根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

公开(公告)号：US20130270565A1

公开(公告)日：2013-10-17

申请号：US13907132

申请日：2013-05-31

Applicant: Samsung Display Co., Ltd.

Inventor： Chang-Oh JEONG ,  Woo-Sung SOHN ,  Dong-Gyu KIM ,  Shi-Yul KIM ,  Ki-Yeup LEE ,  Jean-Ho SONG

IPC: H01L33/16

CPC classification number: H01L33/16 ,  H01L27/124 ,  H01L27/1288

Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

Abstract translation: 提供了一种薄膜晶体管阵列面板，包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，以及设置在半导体层上的数据线和漏电极。 数据线和漏电极具有包括下层和上层的双层结构，其中下层具有突出于上层之外的第一部分，并且半导体层具有突出于下层边缘外侧的第二部分 。

公开(公告)号：US20160116796A1

公开(公告)日：2016-04-28

申请号：US14745059

申请日：2015-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyang-Yul KIM ,  Seung-Hyun PARK ,  Jung-Ho PARK ,  Jean-Ho SONG ,  Ji-Eun LEE

IPC: G02F1/1335 ,  G02B5/20 ,  G02F1/1343

CPC classification number: G02F1/133514 ,  G02B5/201 ,  G02F1/133516 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/13439 ,  G02F2001/136222

Abstract: A liquid crystal display device includes an insulation substrate including a transmissive area and a reflective area, an organic layer positioned on the insulation substrate, and including a triangular pattern in the reflective area, a reflective electrode including reflective patterns corresponding to the triangular pattern of the organic layer in the reflective area, a color filter layer positioned on the reflective electrode, and including an opening for exposing a partial area of the reflective pattern, and a transparent layer disposed inside the opening of the color filter layer.

Abstract translation: 一种液晶显示装置，包括具有透射区域和反射区域的绝缘基板，位于绝缘基板上的有机层，并且在反射区域中包括三角形图案，反射电极，其包括对应于所述反射区域的三角形图案的反射图案 反射区域中的有机层，位于反射电极上的滤色层，并且包括用于曝光反射图案的局部区域的开口，以及设置在滤色器层的开口内的透明层。

公开(公告)号：US20150129885A1

公开(公告)日：2015-05-14

申请号：US14605749

申请日：2015-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byeong-Beom KIM ,  Je-Hyeong PARK ,  Jae-Hyoung YOUN ,  Jean-Ho SONG ,  Jong-In KIM

IPC: H01L27/12 ,  H01L23/482

CPC classification number: H01L27/124 ,  C23C14/14 ,  C23C14/34 ,  H01L23/4827 ,  H01L23/52 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

Abstract translation: 根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层薄。