公开(公告)号：US20180145256A1

公开(公告)日：2018-05-24

申请号：US15689396

申请日：2017-08-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chan-Woo YANG ,  Seung-Bae KANG ,  Han-Su KIM ,  Bong-Won LEE

IPC: H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  G06F3/041

CPC classification number: H01L51/0023 ,  G06F3/041 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L51/0097 ,  H01L51/5203 ,  H01L51/5209 ,  H01L51/56 ,  H01L2251/5338

Abstract: A flexible electrode for a display device may include a conductive structure including a lower conductive pattern disposed on a substrate and an upper conductive pattern disposed on the lower conductive pattern, and an electrode layer disposed on the substrate, the electrode layer being adjacent to the conductive structure. A width of a top surface of the lower conductive pattern may be less than a width of a bottom surface of the upper conductive pattern.

公开(公告)号：US20160099264A1

公开(公告)日：2016-04-07

申请号：US14664232

申请日：2015-03-20

Applicant: Samsung Display Co., LTD.

Inventor： Su-Kyoung YANG ,  Sang-Won SHIN ,  Hyun-Eok SHIN ,  Chan-Woo YANG ,  Dong-Min LEE

IPC: H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L29/45 ,  C23C14/58 ,  H01L21/67 ,  H01J37/34 ,  C23C14/02 ,  C23C14/16 ,  C23C14/08 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L27/1259 ,  C23C14/02 ,  C23C14/541 ,  C23C14/5806 ,  H01J37/34 ,  H01L21/28008 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742

Abstract: In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

Abstract translation: 在制造薄膜晶体管基板的方法中，在基底基板的第一表面上形成第一金属层。 通过使第一金属层与第一冷却板接触并使基底基板的第二表面与第二冷却板接触来冷却基底基板。 基底基板的第一表面和第二表面面向相反的方向。 通过图案化第一金属层形成栅电极。 形成源电极和漏电极。 源极与漏电极间隔开。 源极和漏极部分地与栅电极重叠。 形成与漏电极电连接的像素电极。

公开(公告)号：US20150155309A1

公开(公告)日：2015-06-04

申请号：US14249199

申请日：2014-04-09

Applicant: Samsung Display Co., LTD.

Inventor： Xinxing LI ,  Do-Hyun KIM ,  Chan-Woo YANG ,  Jeong-Ju PARK ,  Jun-Hyun PARK ,  Xun ZHU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1259 ,  H01L27/1288

Abstract: A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.

Abstract translation: 显示基板包括栅极金属图案，其包括设置在基底基板上的栅极线和与栅极线电连接的栅电极，与栅极金属图案完全重叠的有源图案，并且包括氧化物半导体和数据金属图案， 所述有源图案包括数据线，与所述栅极线电连接的源电极和与所述源电极间隔开的漏电极。 有源图案具有重叠区域，其中有源图案与源电极和漏电极重叠，并且有源图案不与源电极和漏电极重叠的曝光区域。 重叠区域的厚度和曝光区域的厚度相同。

公开(公告)号：US20170084635A1

公开(公告)日：2017-03-23

申请号：US15190919

申请日：2016-06-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hye-Young PARK ,  Hye-Hyang PARK ,  Hui-Won YANG ,  Eun-Young LEE ,  Joo-Hee JEON ,  Su-Kyoung YANG ,  Chan-Woo YANG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/78675 ,  H01L2227/323

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

公开(公告)号：US20130237011A1

公开(公告)日：2013-09-12

申请号：US13679311

申请日：2012-11-16

Applicant: SAMSUNG DISPLAY CO., LTD. ,  KOREAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOL

Inventor： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Seung-Ho JUNG ,  Tae-Young CHOI ,  Doo-Na KIM ,  Byeong-Soo BAE ,  Chan-Woo YANG ,  Byung-Ju LEE ,  Kang-Moon JO ,  Young-Hwan HWANG ,  Jun-Hyuck JEON

IPC: C09D1/00 ,  H01L29/66

CPC classification number: C09D1/00 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.

Abstract translation: 制造薄膜晶体管基板的方法包括：在基板上涂布组合物以在基板上形成薄膜，加热薄膜，并对薄膜进行构图以形成氧化物半导体图案。 该组合物包括金属硝酸盐和水。 组合物的氢（pH）的电位为约1至约4。