ORGANIC LIGHT EMITTING DISPLAY DEVICE
    2.
    发明申请

    公开(公告)号:US20190355791A1

    公开(公告)日:2019-11-21

    申请号:US16530213

    申请日:2019-08-02

    Abstract: An OLED display device includes a substrate including a display region and a pad region, a display structure in the display region on the substrate, and a pad electrode structure in the pad region on the substrate, the pad electrode structure having a first pad electrode on the substrate, a first insulation layer covering opposite lateral portions of the first pad electrode and exposing a portion of an upper surface of the first pad electrode, a second pad electrode on the first pad electrode and on the first insulation layer, the second pad electrode having a step portion where the first pad electrode and the first insulation layer are overlapped, and a third pad electrode on the second pad electrode and on the first insulation layer, the third electrode covering the second pad electrode.

    METHOD OF MANUFACTURING AN OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE HAVING THE SAME
    5.
    发明申请
    METHOD OF MANUFACTURING AN OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE HAVING THE SAME 有权
    制造氧化物半导体器件的方法及制造具有该氧化物半导体器件的显示器件的方法

    公开(公告)号:US20150024530A1

    公开(公告)日:2015-01-22

    申请号:US14140944

    申请日:2013-12-26

    Inventor: Bong-Won LEE

    Abstract: Disclosed is a method of manufacturing an oxide semiconductor device, including: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern; forming an insulating interlayer on the gate insulating layer, the active pattern, and the first mask pattern; forming a second mask pattern on the insulating interlayer, the second mask pattern comprising an opening that exposes a region where the first mask pattern is formed; forming contact holes exposing portions of the active pattern by patterning the insulating interlayer using the first mask pattern and the second mask pattern; and forming a source electrode and a drain electrode on the gate insulating layer by filling the contact holes, the drain electrode spaced apart from the source electrode.

    Abstract translation: 公开了一种制造氧化物半导体器件的方法,包括:在衬底上形成栅电极; 在栅电极上形成栅极绝缘层; 在栅极绝缘层上形成有源图案; 在所述栅极绝缘层和所述有源图案上形成第一掩模图案; 在所述栅极绝缘层,所述有源图案和所述第一掩模图案上形成绝缘中间层; 在所述绝缘中间层上形成第二掩模图案,所述第二掩模图案包括露出形成所述第一掩模图案的区域的开口; 通过使用所述第一掩模图案和所述第二掩模图案图案化所述绝缘中间层来形成暴露所述有源图案的部分的接触孔; 以及通过填充所述接触孔,所述漏电极与所述源电极间隔开,在所述栅极绝缘层上形成源电极和漏电极。

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