TRANSISTOR DISPLAY PANEL
    1.
    发明申请

    公开(公告)号:US20190123064A1

    公开(公告)日:2019-04-25

    申请号:US16059088

    申请日:2018-08-09

    Abstract: A transistor display panel including a substrate, a gate line disposed on the substrate and extending in a first direction, a gate electrode protruding from the gate line, a gate insulating layer disposed on the gate line and the gate electrode, a semiconductor layer and an auxiliary layer disposed on the gate insulating layer and spaced apart from each other, a data line disposed on the gate insulating layer and extending in a second direction which is a direction crossing the gate line, a drain electrode disposed on the gate insulating layer and the semiconductor layer and spaced apart from the data line, and a pixel electrode connected to the drain electrode, in which the auxiliary layer overlaps an edge of the gate electrode in a plan view.

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20150187813A1

    公开(公告)日:2015-07-02

    申请号:US14659120

    申请日:2015-03-16

    Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

    Abstract translation: 公开了薄膜晶体管阵列面板。 薄膜晶体管阵列面板可以包括设置在基板上并包括栅电极的栅极线,包括设置在基板上的氧化物半导体的半导体层,设置在基板上的数据布线层,并且包括与栅极线交叉的数据线 连接到数据线的源电极和面对源电极的漏电极,覆盖源电极和漏电极的聚合物层和设置在聚合物层上的钝化层。 数据布线层可以包括铜或铜合金,并且聚合物层可以包括碳氟化合物。

    THIN FILM TRANSISTOR WITH IMPROVED ELECTRICAL CHARACTERISTICS
    3.
    发明申请
    THIN FILM TRANSISTOR WITH IMPROVED ELECTRICAL CHARACTERISTICS 审中-公开
    具有改进电气特性的薄膜晶体管

    公开(公告)号:US20160172508A1

    公开(公告)日:2016-06-16

    申请号:US14701325

    申请日:2015-04-30

    Abstract: A thin film transistor having uniform electrical characteristics and reduced power consumption is presented. The thin film transistor includes a semiconductor layer, a first metal oxide layer coming in contact with the semiconductor layer and having thermal conductivity that is lower than the thermal conductivity of the semiconductor layer and a second metal oxide layer coming in contact with the first metal oxide layer and having thermal conductivity that is higher than the thermal conductivity of the first metal oxide layer.

    Abstract translation: 介绍了具有均匀电特性和降低功耗的薄膜晶体管。 薄膜晶体管包括半导体层,与半导体层接触并具有低于半导体层的热导率的热导率的第一金属氧化物层和与第一金属氧化物接触的第二金属氧化物层 并且具有比第一金属氧化物层的热导率高的导热性。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20140332889A1

    公开(公告)日:2014-11-13

    申请号:US14012580

    申请日:2013-08-28

    Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

    Abstract translation: 公开了薄膜晶体管阵列面板。 薄膜晶体管阵列面板可以包括设置在基板上并包括栅电极的栅极线,包括设置在基板上的氧化物半导体的半导体层,设置在基板上的数据布线层,并且包括与栅极线交叉的数据线 连接到数据线的源电极和面对源电极的漏电极,覆盖源电极和漏电极的聚合物层和设置在聚合物层上的钝化层。 数据布线层可以包括铜或铜合金,并且聚合物层可以包括碳氟化合物。

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