公开(公告)号：US20170207282A1

公开(公告)日：2017-07-20

申请号：US15209799

申请日：2016-07-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi KISHIMOTO ,  Atsushi KITABAYASHI ,  Jae Kwon HWANG

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/002 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/56 ,  H01L2227/323

Abstract: A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate for each pixel of a plurality of pixels; forming a pixel defining film on the first electrode such that the pixel defining film includes an opening exposing the first electrode; and forming an organic layer on the first electrode, wherein forming the organic layer includes providing an organic solution into the opening of the pixel defining film, and drying the organic solution by performing an exhaust process in a state where an air current is provided by using a drying gas such that the air current is sequentially composed of a position facing the organic solution, a position to which the organic solution is discharged, and a position facing the organic solution.

公开(公告)号：US20150270118A1

公开(公告)日：2015-09-24

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi KISHIMOTO ,  Yeon-Keon MOON ,  Sang-Woo SOHN ,  Takayuki FUKASAWA ,  Sang-Won SHIN

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/46

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Abstract translation: 一种氧化物半导体沉积装置，包括加热室，其被配置为加热和等离子体处理包括绝缘层的第一基板，并且包括室主体，设置在室主体中的加热第一基板的加热器，以及 与加热器隔开的阴极板，施加到阴极板的高频电压，以及第一处理室，其被配置为在第一基板的绝缘层上提供氧化物半导体层。

公开(公告)号：US20140353658A1

公开(公告)日：2014-12-04

申请号：US14049422

申请日：2013-10-09

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi KISHIMOTO ,  Takayuki FUKASAWA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  C23C14/34

CPC classification number: H01L21/02631 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract translation: 薄膜晶体管包括栅电极，源电极，设置在与源电极相同的层上并面对源电极的漏电极，设置在栅电极和源电极或漏电极之间的氧化物半导体层，以及 栅极绝缘层，其设置在栅电极和源电极或漏电极之间，其中氧化物半导体层包括铊和铟，锌，锡和镓中的至少一种。 还有一种氧化物溅射靶，包括：包括铊（Tl）的氧化物; 以及铟，锌，锡和镓中的至少一种。

公开(公告)号：US20200168830A1

公开(公告)日：2020-05-28

申请号：US16777549

申请日：2020-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi KISHIMOTO ,  Yoon Ho KANG ,  Dong Hoon KWAK

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/52

Abstract: An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

公开(公告)号：US20170352830A1

公开(公告)日：2017-12-07

申请号：US15441717

申请日：2017-02-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi KISHIMOTO ,  Yoon Ho KANG ,  Dong Hoon KWAK

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5088 ,  H01L51/0026 ,  H01L51/0059 ,  H01L51/5004 ,  H01L51/5008 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5064 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2251/552

Abstract: An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

公开(公告)号：US20150184285A1

公开(公告)日：2015-07-02

申请号：US14558521

申请日：2014-12-02

Applicant: Samsung Display Co., LTD.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon MOON ,  Sang-woo SOHN ,  Sang-Won SHIN ,  Katsushi KISHIMOTO

IPC: C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3405 ,  C23C14/228 ,  C23C14/35 ,  H01J37/3447

Abstract: A sputtering apparatus includes a chamber, a plate disposed inside the chamber, a target unit including at least one targer facing the plate, a power supply unit coupled to the target, and a filter unit disposed between the substrate and the target. The filter unit includes at least one filter. A substrate is disposed on the plate. The filter unit may include a first filter and a second filter with the first filter disposed between the target and the second filter.

Abstract translation: 溅射装置包括室，设置在室内的板，包括面向板的至少一个更大的目标单元，耦合到靶的电源单元和布置在基板和靶之间的过滤器单元。 过滤器单元包括至少一个过滤器。 基板设置在板上。 过滤器单元可以包括第一过滤器和第二过滤器，其中第一过滤器设置在目标和第二过滤器之间。

公开(公告)号：US20220255033A1

公开(公告)日：2022-08-11

申请号：US17450612

申请日：2021-10-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunsuk Park ,  Katsushi KISHIMOTO

IPC: H01L51/50

Abstract: An organic light-emitting display apparatus includes: a first pixel electrode; a second pixel electrode spaced apart from the first pixel electrode and comprising a top surface that is flatter than a top surface of the first pixel electrode; a first color emission layer on the first pixel electrode; and a second color emission layer on the second pixel electrode and configured to emit light having a wavelength longer than a wavelength of light emitted by the first color emission layer.

公开(公告)号：US20170317318A1

公开(公告)日：2017-11-02

申请号：US15236805

申请日：2016-08-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi KISHIMOTO

IPC: H01L51/56 ,  H01L51/50 ,  H01L27/32 ,  B05D1/00 ,  H01L51/00

CPC classification number: B05D1/60 ,  B05D3/0466 ,  B05D3/0473 ,  H01L51/0008 ,  H01L51/0026 ,  H01L51/56 ,  H01L2227/323

Abstract: A method of manufacturing a film includes disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes, and spraying an inert gas toward the substrate through a plurality of nozzle tips branched from a gas distribution pipe that is disposed over an other side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes.