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公开(公告)号：US20200028328A1
公开(公告)日：2020-01-23
申请号：US16515202
申请日：2019-07-18
摘要： A vertical cavity surface emitting laser includes an active layer having a quantum well structure, a first laminate for a first distributed Bragg reflector, and a first spacer region provided between the active layer and the first laminate. A barrier layer of the quantum well structure includes a first compound semiconductor containing aluminum as a group m constituent element. The first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor. A concentration of first dopant in the first laminate is larger than a concentration of the first dopant in the first portion of the first spacer region. The concentration of the first dopant in the first portion of the first spacer region is larger than a concentration of the first dopant in the second portion of the first spacer region.
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公开(公告)号：US20130177035A1
公开(公告)日：2013-07-11
申请号：US13644478
申请日：2012-10-04
发明人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/30
CPC分类号： H01S5/30 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3201 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.
摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑基底，主表面上的有源层和主表面上的p型包层区域。 主表面倾斜到垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面。 p型包层区包括各向异性应变的AlGaN层的第一p型III族氮化物半导体层和与AlGaN层不同的材料的第二p型III族氮化物半导体层。 第一p型III族氮化物半导体层设置在第二p型III族氮化物半导体层和有源层之间。 AlGaN层在p型包层区域具有最大的带隙。 第二p型III族氮化物半导体层的电阻率低于第一p型III族氮化物半导体层。
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公开(公告)号：US20230036079A1
公开(公告)日：2023-02-02
申请号：US17860164
申请日：2022-07-08
摘要： A vertical cavity surface-emitting laser configured to emit laser light having a wavelength of 830 nm to 910 nm includes a substrate having a main surface including GaAs, a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, and the second distributed Bragg reflector are arranged in a first axis direction intersecting the main surface. The main surface has an off angle of 6° or more with respect to a (100) plane. The active layer includes InxAlyGa1-x-yAs (0
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4.发明申请METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开氮化硅半导体器件的制造方法，制备III族氮化物半导体器件的方法和III族氮化物半导体器件公开(公告)号：US20130285066A1
公开(公告)日：2013-10-31
申请号：US13871760
申请日：2013-04-26
发明人： Takamichi SUMITOMO , Masaki UENO , Yusuke YOSHIZUMI , Yohei ENYA
CPC分类号： H01L33/0062 , B82Y20/00 , H01L33/0095 , H01L33/305 , H01S5/0206 , H01S5/0421 , H01S5/2009 , H01S5/2068 , H01S5/3063 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： Provided is a method of fabricating a gallium nitride semiconductor which enables activation of a p-type dopant with a heat treatment performed for a relatively short period of time. The fabricating method comprises the step of performing, in a vacuum, a heat treatment of a group III nitride semiconductor region, the group III nitride semiconductor region comprising a gallium nitride semiconductor, the gallium nitride semiconductor including a p-type dopant, the a group III nitride semiconductor region having a group III nitride semiconductor surface inclined with respect to a reference plane perpendicular to a reference axis, and the reference axis extending in a direction of a c-axis of the gallium nitride semiconductor.
摘要翻译： 提供一种通过在较短时间内进行的热处理来制造能够激活p型掺杂剂的氮化镓半导体的方法。 制造方法包括在真空中进行III族氮化物半导体区域的热处理，包括氮化镓半导体的III族氮化物半导体区域，包括p型掺杂剂的氮化镓半导体，a组 III族氮化物半导体区域，其具有相对于垂直于参考轴线的参考平面倾斜的III族氮化物半导体表面，以及在氮化镓半导体的c轴方向上延伸的参考轴。
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5.发明申请公开(公告)号：US20190044306A1
公开(公告)日：2019-02-07
申请号：US16049496
申请日：2018-07-30
发明人： Toshiyuki TANAHASHI , Takashi ISHIZUKA , Susumu YOSHIMOTO , Takamichi SUMITOMO , Koji NISHIZUKA , Kei FUJI , Suguru ARIKATA
摘要： A vertical cavity surface emitting laser includes: an active layer; a first laminate for a first distributed Bragg reflector; and a first intermediate layer disposed between the active layer and the first laminate. The first intermediate layer has first and second portions. The first laminate, the first and second portions of the first intermediate layer, and the active layer are arranged along a direction of a first axis. The first laminate and the first portion of the first intermediate layer each include a first dopant. The active layer has a first-dopant concentration of less than 1×1016 cm−3. The first portion of the first intermediate layer has a first-dopant concentration smaller than that of the first laminate. The second portion of the first intermediate layer has a first-dopant concentration smaller than that of the first portion of the first intermediate layer.
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