-
公开(公告)号：US20220037854A1
公开(公告)日：2022-02-03
申请号：US17391091
申请日：2021-08-02
发明人： Takeshi AOKI , Rei TANAKA , Yuji KOYAMA
摘要： A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area.
-
公开(公告)号：US20230036079A1
公开(公告)日：2023-02-02
申请号：US17860164
申请日：2022-07-08
摘要： A vertical cavity surface-emitting laser configured to emit laser light having a wavelength of 830 nm to 910 nm includes a substrate having a main surface including GaAs, a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, and the second distributed Bragg reflector are arranged in a first axis direction intersecting the main surface. The main surface has an off angle of 6° or more with respect to a (100) plane. The active layer includes InxAlyGa1-x-yAs (0
-
公开(公告)号：US20200099195A1
公开(公告)日：2020-03-26
申请号：US16570359
申请日：2019-09-13
发明人： Natsumi KANEKO , Yutaka ONISHI , Takeshi AOKI
摘要： A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.
-
公开(公告)号：US20220320830A1
公开(公告)日：2022-10-06
申请号：US17616051
申请日：2020-03-31
发明人： Takeshi AOKI , Susumu YOSHIMOTO
摘要： A surface-emitting laser includes a lower DBR layer, a cavity layer, and an upper DBR layer that are stacked in this order on top of a substrate, wherein the lower DBR layer has a first DBR layer, a contact layer, and a second DBR layer that are stacked in this order on top of the substrate, wherein the first DBR layer and the second DBR layer each include a plurality of first layers and a plurality of second layers that are alternately stacked, wherein the first layers and the second layers are each a semiconductor layer including aluminum, wherein a composition ratio of the aluminum of each first layer is lower than a composition ratio of the aluminum of each second layer, and wherein the second DBR layer includes 12 or more and 20 or fewer pairs of the first layers and the second layers.
-
公开(公告)号：US20220224079A1
公开(公告)日：2022-07-14
申请号：US17539497
申请日：2021-12-01
发明人： Takeshi AOKI
摘要： A vertical-cavity surface-emitting laser includes a substrate having a main surface, a first lower distributed Bragg reflector that extends to an edge of the main surface, a III-V compound semiconductor layer disposed on the first lower distributed Bragg reflector, a second lower distributed Bragg reflector disposed on the III-V compound semiconductor layer, an active layer disposed above the second lower distributed Bragg reflector and an upper distributed Bragg reflector disposed on the active layer. The first lower distributed Bragg reflector includes a first layer and a second layer that are alternately arranged. The upper distributed Bragg reflector includes a third layer and a fourth layer that are alternately arranged. The III-V compound semiconductor layer is free of aluminum or has an aluminum composition less than an aluminum composition of the third layer. The first layer has an aluminum composition greater than the aluminum composition of the third layer.
-
公开(公告)号：US20230163568A1
公开(公告)日：2023-05-25
申请号：US17963336
申请日：2022-10-11
发明人： Takeshi AOKI
CPC分类号： H01S5/18361 , H01S5/04256 , H01S5/18311
摘要： A vertical cavity surface emitting laser includes a post provided at a major surface of a substrate and extending along a first axis intersecting the major surface of the substrate, and an electrode provided at an upper surface of the post and surrounding the first axis. The post includes a first distributed Bragg reflector, an active layer, a current confinement layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, the current confinement layer, and the second distributed Bragg reflector are disposed in order in a direction of the first axis.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.024 秒)
