- 专利标题: VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER
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申请号: US16049496申请日: 2018-07-30
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公开(公告)号: US20190044306A1公开(公告)日: 2019-02-07
- 发明人: Toshiyuki TANAHASHI , Takashi ISHIZUKA , Susumu YOSHIMOTO , Takamichi SUMITOMO , Koji NISHIZUKA , Kei FUJI , Suguru ARIKATA
- 申请人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址: JP Osaka
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2017-152606 20170807
- 主分类号: H01S5/187
- IPC分类号: H01S5/187 ; H01S5/042 ; H01S5/343 ; H01S5/30 ; H01S5/028 ; H01S5/183
摘要:
A vertical cavity surface emitting laser includes: an active layer; a first laminate for a first distributed Bragg reflector; and a first intermediate layer disposed between the active layer and the first laminate. The first intermediate layer has first and second portions. The first laminate, the first and second portions of the first intermediate layer, and the active layer are arranged along a direction of a first axis. The first laminate and the first portion of the first intermediate layer each include a first dopant. The active layer has a first-dopant concentration of less than 1×1016 cm−3. The first portion of the first intermediate layer has a first-dopant concentration smaller than that of the first laminate. The second portion of the first intermediate layer has a first-dopant concentration smaller than that of the first portion of the first intermediate layer.
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