公开(公告)号：US09704857B2

公开(公告)日：2017-07-11

申请号：US13678134

申请日：2012-11-15

Applicant: STATS ChipPAC, Ltd.

Inventor： HyunTai Kim ,  YongTaek Lee ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

IPC: H01G9/00 ,  H01L21/00 ,  H01L27/06 ,  H01L21/56 ,  H01L23/31 ,  H01L23/64 ,  H01L23/66 ,  H01L27/01 ,  H01L49/02 ,  H01L27/08 ,  H01L23/00

CPC classification number: H01L27/0676 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L27/016 ,  H01L27/0805 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

公开(公告)号：US20140002207A1

公开(公告)日：2014-01-02

申请号：US14018282

申请日：2013-09-04

Applicant: STATS ChipPAC, Ltd.

Inventor： Kai Liu ,  Robert C. Frye ,  Yaojian Lin

IPC: H03H7/42 ,  H01L49/02

CPC classification number: H03H7/422 ,  H01L28/10 ,  H03H7/09 ,  H03H7/1766 ,  H03H7/42

Abstract: A band-pass filter has a plurality of frequency band channels each including a first inductor having a first terminal coupled to a first balanced port and a second terminal coupled to a second balanced port. A first capacitor is coupled between the first and second terminals of the first inductor. A second inductor has a first terminal coupled to a first unbalanced port and a second terminal coupled to a second unbalanced port. The second inductor is disposed within a first distance of the first inductor to induce magnetic coupling. A second capacitor is coupled between the first and second terminals of the second inductor. A third inductor is disposed within a second distance of the first inductor and within a third distance of the second inductor to induce magnetic coupling. A second capacitor is coupled between first and second terminals of the third inductor.

Abstract translation: 带通滤波器具有多个频带信道，每个频带信道包括具有耦合到第一平衡端口的第一端子的第一电感器和耦合到第二平衡端口的第二端子。 第一电容器耦合在第一电感器的第一和第二端子之间。 第二电感器具有耦合到第一不平衡端口的第一端子和耦合到第二不平衡端口的第二端子。 第二电感器设置在第一电感器的第一距离内以引起磁耦合。 第二电容器耦合在第二电感器的第一和第二端子之间。 第三电感器设置在第一电感器的第二距离内并且在第二电感器的第三距离内，以引起磁耦合。 第二电容器耦合在第三电感器的第一和第二端子之间。

公开(公告)号：US08975980B2

公开(公告)日：2015-03-10

申请号：US14018282

申请日：2013-09-04

Applicant: STATS ChipPAC, Ltd.

Inventor： Kai Liu ,  Robert C. Frye ,  Yaojian Lin

IPC: H01P3/08 ,  H01F19/00 ,  H03H7/42 ,  H03H7/09 ,  H03H7/01 ,  H01L49/02

CPC classification number: H03H7/422 ,  H01L28/10 ,  H03H7/09 ,  H03H7/1766 ,  H03H7/42

Abstract: A band-pass filter has a plurality of frequency band channels each including a first inductor having a first terminal coupled to a first balanced port and a second terminal coupled to a second balanced port. A first capacitor is coupled between the first and second terminals of the first inductor. A second inductor has a first terminal coupled to a first unbalanced port and a second terminal coupled to a second unbalanced port. The second inductor is disposed within a first distance of the first inductor to induce magnetic coupling. A second capacitor is coupled between the first and second terminals of the second inductor. A third inductor is disposed within a second distance of the first inductor and within a third distance of the second inductor to induce magnetic coupling. A second capacitor is coupled between first and second terminals of the third inductor.

Abstract translation: 带通滤波器具有多个频带信道，每个频带信道包括具有耦合到第一平衡端口的第一端子的第一电感器和耦合到第二平衡端口的第二端子。 第一电容器耦合在第一电感器的第一和第二端子之间。 第二电感器具有耦合到第一不平衡端口的第一端子和耦合到第二不平衡端口的第二端子。 第二电感器设置在第一电感器的第一距离内以引起磁耦合。 第二电容器耦合在第二电感器的第一和第二端子之间。 第三电感器设置在第一电感器的第二距离内并且在第二电感器的第三距离内，以引起磁耦合。 第二电容器耦合在第三电感器的第一和第二端子之间。

公开(公告)号：US20140084415A1

公开(公告)日：2014-03-27

申请号：US14092304

申请日：2013-11-27

Applicant: STATS ChipPAC, Ltd.

Inventor： Yaojian Lin ,  Kai Liu ,  Kang Chen

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L25/16 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1206 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H03H2001/0078 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.

Abstract translation: 半导体器件具有第一半导体管芯。 在第一半导体管芯上形成第一电感器。 第二电感器形成在第一电感器上并与第一电感器对准。 在第一半导体管芯和第一和第二电感器上形成绝缘层。 导电桥形成在绝缘层之上并电连接在第二电感器和第一半导体管芯之间。 在一个实施例中，半导体器件具有第二半导体管芯，并且在第一和第二半导体管芯之间形成导电层。 在另一实施例中，在第一半导体管芯上形成电容器。 在另一个实施例中，绝缘层在第一半导体管芯的覆盖区之上具有第一厚度，并且第二厚度小于第一半导体管芯的覆盖区之外的第一厚度。

公开(公告)号：US09484334B2

公开(公告)日：2016-11-01

申请号：US13716799

申请日：2012-12-17

Applicant: STATS ChipPAC, Ltd.

Inventor： Robert C. Frye ,  Kai Liu

IPC: H03H7/42 ,  H01L27/01 ,  H01P5/10 ,  H03H7/48 ,  H01L21/70 ,  H05K1/02 ,  H03H5/00 ,  H05K1/16

CPC classification number: H01L27/01 ,  H01L21/70 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01P5/10 ,  H03H7/48 ,  H05K1/0233 ,  H05K1/0239 ,  H05K1/0243 ,  H05K1/025 ,  H05K1/165 ,  H05K2201/09245 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.

公开(公告)号：US09368563B2

公开(公告)日：2016-06-14

申请号：US14092304

申请日：2013-11-27

Applicant: STATS ChipPAC, Ltd.

Inventor： Yaojian Lin ,  Kai Liu ,  Kang Chen

IPC: H01L27/00 ,  H01L49/02 ,  H01L21/56 ,  H01L23/522 ,  H01L23/538 ,  H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  H03H1/00 ,  H01L23/498

CPC classification number: H01L28/10 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L25/16 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1206 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H03H2001/0078 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.

Abstract translation: 半导体器件具有第一半导体管芯。 在第一半导体管芯上形成第一电感器。 第二电感器形成在第一电感器上并与第一电感器对准。 在第一半导体管芯和第一和第二电感器上形成绝缘层。 导电桥形成在绝缘层之上并电连接在第二电感器和第一半导体管芯之间。 在一个实施例中，半导体器件具有第二半导体管芯，并且在第一和第二半导体管芯之间形成导电层。 在另一实施例中，在第一半导体管芯上形成电容器。 在另一个实施例中，绝缘层在第一半导体管芯的覆盖区之上具有第一厚度，并且第二厚度小于第一半导体管芯的覆盖区之外的第一厚度。

公开(公告)号：US20130069197A1

公开(公告)日：2013-03-21

申请号：US13678134

申请日：2012-11-15

Applicant: Stats ChipPac, Ltd.

Inventor： HyunTai Kim ,  YongTaek Lee ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

IPC: H01L27/06 ,  H01L27/08

CPC classification number: H01L27/0676 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L27/016 ,  H01L27/0805 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

Abstract translation: 半导体器件具有在衬底上形成的衬底和RF FEM。 RF FEM包括具有耦合用于接收发射信号的输入的LC低通滤波器。 Tx / Rx开关具有耦合到LC滤波器的输出的第一端子。 双工器具有耦合到Tx / Rx开关的第二端子的第一端子和用于提供RF信号的第二端子。 IPD带通滤波器具有耦合到Tx / Rx开关的第三端子的输入端和提供接收信号的输出端。 LC滤波器包括缠绕的导电迹线以显示感应和互感特性以及耦合到导电迹线的电容器。 IPD滤波器包括缠绕的导电迹线以显示感应和互感特性以及耦合到导电迹线的电容器。 RF FEM衬底可以堆叠在包含RF收发器的半导体封装上。

公开(公告)号：US20130099356A1

公开(公告)日：2013-04-25

申请号：US13716799

申请日：2012-12-17

Applicant: STATS ChipPAC, Ltd.

Inventor： Robert C. Frye ,  Kai Liu

IPC: H01L27/01 ,  H01L21/70

CPC classification number: H01L27/01 ,  H01L21/70 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01P5/10 ,  H03H7/48 ,  H05K1/0233 ,  H05K1/0239 ,  H05K1/0243 ,  H05K1/025 ,  H05K1/165 ,  H05K2201/09245 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.

Abstract translation: 半导体器件具有在衬底上形成的衬底和RF耦合器。 RF耦合器具有第​​一导电迹线，其第一端耦合到半导体器件的第一端子，第二导电迹线具有耦合到半导体器件的第二端子的第一端。 第一导电迹线放置在第二导电迹线的第一部分附近。 在衬底上形成集成的无源器件。 第二导电迹线的第二部分用作集成无源器件的电路部件。 集成的无源器件可以是平衡 - 不平衡转换/低通滤波器。 RF耦合器还具有耦合到半导体器件的第一端子的第一电容器，并且耦合到半导体器件的第三端子的第二电容器用于更高的方向性。 第二导电迹线被卷绕以呈现感应特性。