Invention Application
- Patent Title: Semiconductor Device and Method of Forming Integrated Passive Device Over Semiconductor Die with Conductive Bridge and Fan-Out Redistribution Layer
- Patent Title (中): 半导体器件和半导体芯片集成无源器件与导电桥和扇出重分布层的方法
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Application No.: US14092304Application Date: 2013-11-27
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Publication No.: US20140084415A1Publication Date: 2014-03-27
- Inventor: Yaojian Lin , Kai Liu , Kang Chen
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.
Public/Granted literature
Information query
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