Abstract:
A semiconductor chip includes a chip body and a plurality of solder-including electrodes provided on an element-formation surface of the chip body. A packaging substrate includes a substrate body, and one or more conductive layers and a solder resist layer that are provided on a front surface of the substrate body. The solder resist layer is provided as a continuous layer on the front surface of the substrate body and the one or more conductive layers, and has one or more apertures on each of the one or more conductive layers. The plurality of solder-including electrodes include two or more first electrodes having a same function other than a function of power supply. The one or more conductive layers include a continuous first conductive layer. The two or more first electrodes are connected to the continuous first conductive layer. The one or more apertures are confronted with the respective two or more first electrodes.
Abstract:
A source device includes: a low-speed data supply section configured to supply, as low-speed data, data generated in synchronization with a low clock signal out of clock signals having different frequencies, the low clock signal having a frequency lower than a predetermined value; a high-speed data supply section configured to supply, as high-speed data, data generated in synchronization with a high clock signal out of the clock signals, the high clock signal having a frequency higher than that of the low clock signal; a dividing section configured to divide the low-speed data into a predetermined number of pieces of data in accordance with a ratio between the frequencies of the high and low clock signals; and a data transmitting section configured to store the high-speed data and the divided pieces of low-speed data in data having a predetermined data size, and to transmit the stored data.
Abstract:
A source device includes: a low-speed data supply section configured to supply, as low-speed data, data generated in synchronization with a low clock signal out of clock signals having different frequencies, the low clock signal having a frequency lower than a predetermined value; a high-speed data supply section configured to supply, as high-speed data, data generated in synchronization with a high clock signal out of the clock signals, the high clock signal having a frequency higher than that of the low clock signal; a dividing section configured to divide the low-speed data into a predetermined number of pieces of data in accordance with a ratio between the frequencies of the high and low clock signals; and a data transmitting section configured to store the high-speed data and the divided pieces of low-speed data in data having a predetermined data size, and to transmit the stored data.
Abstract:
Provided is a semiconductor device that includes a semiconductor chip, and a packaging substrate on which the semiconductor chip is mounted. The semiconductor chip includes a chip body and a plurality of solder-including electrodes that are provided on an element-formation surface of the chip body. The packaging substrate includes a substrate body, and a plurality of wirings and a solder resist layer that are provided on a front surface of the substrate body. The solder resist layer is provided as a continuous layer on the front surface of the substrate body and the plurality of wirings, and has an aperture on each of the plurality of wirings. The aperture has a planar shape elongated in a lengthwise direction of the wiring inside the aperture, with a length of the aperture adjusted in accordance with a thermal expansion coefficient of the packaging substrate.