公开(公告)号：US09646837B2

公开(公告)日：2017-05-09

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

公开(公告)号：US20130256566A1

公开(公告)日：2013-10-03

申请号：US13839753

申请日：2013-03-15

Applicant: SEN CORPORATION

Inventor： Hiroyuki KARIYA ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01L21/67

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。

公开(公告)号：US20130157390A1

公开(公告)日：2013-06-20

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract translation: 离子注入方法包括将离子作为离子束输送到晶片，导致晶片经历晶片机械慢扫描，并且还使得离子束经历光束快速扫描或使得晶片在垂直于晶体的方向上进行晶片机械快速扫描 晶片缓慢的扫描方向，通过在晶片慢速扫描方向上使用晶片慢扫描和离子束的光束快速扫描或晶片在垂直于晶片的方向快速扫描缓慢扫描离子束照射晶片 扫描方向，在离子注入晶片之前测量离子束的二维束形状，并且通过使用测量的二维光束形状限定离子束的注入和照射区域，从而调节注入和照射区域。

公开(公告)号：US08692216B2

公开(公告)日：2014-04-08

申请号：US13839753

申请日：2013-03-15

Applicant: Sen Corporation

Inventor： Hiroyuki Kariya ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01J37/147 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。