公开(公告)号：US09646837B2

公开(公告)日：2017-05-09

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

公开(公告)号：US08759801B2

公开(公告)日：2014-06-24

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20140065737A1

公开(公告)日：2014-03-06

申请号：US14013862

申请日：2013-08-29

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Tadanobu Kagawa ,  Toshio Yumiyama ,  Akira Funai ,  Takashi Kuroda

IPC: H01L21/66 ,  C23C14/48

CPC classification number: H01L22/14 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0206

Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

Abstract translation: 提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元， 可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。

公开(公告)号：US09165772B2

公开(公告)日：2015-10-20

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/66 ,  G01R31/26 ,  H01L21/265 ,  C23C14/48 ,  C23C14/54 ,  H01J37/302 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US08980654B2

公开(公告)日：2015-03-17

申请号：US13939908

申请日：2013-07-11

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01L21/265 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30483

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract translation: 离子注入方法包括使用混合扫描预先设置离子注入期间的物体的离子束扫描速度和机械扫描速度，并且基于设定的离子束扫描速度和所设定的物体的机械扫描速度来注入离子。 在预先设定的情况下，基于根据照射离子的物体的表面轮廓分别改变的离子束扫描振幅各自设定离子束扫描速度，使离子束扫描频率保持恒定， 离子束扫描幅度的任何一个以及对应于离子束扫描速度的物体的机械扫描速度被设定为使得要注入物体表面的每单位面积的离子注入剂量保持恒定。

公开(公告)号：US20150214007A1

公开(公告)日：2015-07-30

申请号：US14605404

申请日：2015-01-26

Applicant: SEN Corporation

Inventor： Masahide Ooura ,  Daisuke Imai ,  Shiro Ninomiya

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/18 ,  H01J2237/304 ,  H01J2237/30472

Abstract: In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.

Abstract translation: 在离子注入装置中，中断构件中断束线中间的离子束B. 等离子体淋浴装置设置在束线中的中断构件的下游侧。 在等离子体淋浴装置的点火开始期间，控制单元使中断部件中断离子束B. 中断构件可以设置在束线中的至少一个高压电场型电极的上游侧。 气体供给单元可以将源气体供应到等离子体淋浴装置。 在离子束B被中断构件中断之后，控制单元可以开始从气体供应单元供应源气体。

公开(公告)号：US20140017825A1

公开(公告)日：2014-01-16

申请号：US13939908

申请日：2013-07-11

Applicant: Sen Corporation

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30483

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract translation: 离子注入方法包括使用混合扫描预先设置离子注入期间的物体的离子束扫描速度和机械扫描速度，并且基于设定的离子束扫描速度和所设定的物体的机械扫描速度来注入离子。 在预先设定的情况下，基于根据照射离子的物体的表面轮廓分别改变的离子束扫描振幅各自设定离子束扫描速度，使离子束扫描频率保持恒定， 离子束扫描幅度的任何一个以及对应于离子束扫描速度的物体的机械扫描速度被设定为使得要注入物体表面的每单位面积的离子注入剂量保持恒定。

公开(公告)号：US09305784B2

公开(公告)日：2016-04-05

申请号：US13748288

申请日：2013-01-23

Applicant: SEN CORPORATION

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: A61N5/00 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US20150162657A1

公开(公告)日：2015-06-11

申请号：US14566133

申请日：2014-12-10

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Masateru Sato

IPC: H01Q1/40 ,  H05H1/46

CPC classification number: H01Q1/40 ,  H01J37/321 ,  H01J37/3211 ,  H01Q1/42 ,  H01Q1/421 ,  H01Q7/00 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

Abstract: An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.

Abstract translation: 提供了一种天线罩，其保护设置在等离子体室中的天线的表面并激发高频电场到等离子体室的内部。 在天线罩中，根据天线的表面位置，与天线表面正交的方向中的至少一个方向的天线罩的厚度不同，使得天线的外表面上的电位的空间依赖性 覆盖减少。 在天线罩中，沿着天线的延伸方向可以改变至少一个方向的厚度。