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公开(公告)号：US09991392B2
公开(公告)日：2018-06-05
申请号：US14550091
申请日：2014-11-21
发明人： Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , G02F1/1368 , H01L23/532 , G02F1/1362 , H01L27/12
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/4966 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.
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公开(公告)号：US20150214376A1
公开(公告)日：2015-07-30
申请号：US14550091
申请日：2014-11-21
发明人： Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/45
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/4966 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.
摘要翻译： 提供一种新颖的半导体器件，其包括晶体管和含有Cu的金属膜用于布线，信号线等。 半导体器件包括第一布线，第二布线，第一晶体管和第二晶体管。 第一布线电连接到第一晶体管的源极或漏极，并且第二布线电连接到第二晶体管的栅极。 第一布线和第二布线均包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。 第一布线中的Cu-X合金膜与第二布线中的Cu-X合金膜连接。
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公开(公告)号：US09147773B2
公开(公告)日：2015-09-29
申请号：US14336127
申请日：2014-07-21
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L21/02 , H01L21/3213 , H01L21/465 , H01L29/66
CPC分类号： H01L29/78693 , H01L21/02071 , H01L21/32136 , H01L21/465 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.
摘要翻译： 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件以实现高生产率。 在制造其中栅极电极层，栅极绝缘膜和氧化物半导体膜依次层叠的晶体管和提供与氧化物半导体膜接触的源电极层和漏电极层的晶体管的半导体器件的制造中， 通过蚀刻步骤形成源电极层和漏电极层，然后进行用于除去由蚀刻步骤产生并存在于氧化物半导体膜的表面及其附近的杂质的步骤。
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公开(公告)号：US08815640B2
公开(公告)日：2014-08-26
申请号：US13652668
申请日：2012-10-16
CPC分类号： H01L29/66969 , H01L29/22 , H01L29/7869
摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.
摘要翻译： 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 在包含作为沟道保护膜的绝缘层设置在氧化物半导体膜上的底栅晶体管的半导体器件中，可以防止包含在蚀刻气体中的元素作为杂质残留在氧化物半导体膜的表面上 通过在形成设置在氧化物半导体膜上并与氧化物半导体膜接触并且/或形成源极和漏极电极层的绝缘层之后进行杂质去除处理。 氧化物半导体膜表面的杂质浓度低于或等于5×1018原子/ cm3，优选为1×1018原子/ cm3以下。
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公开(公告)号：US11430817B2
公开(公告)日：2022-08-30
申请号：US15697627
申请日：2017-09-07
发明人： Shunpei Yamazaki , Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Yasuharu Hosaka , Toshimitsu Obonai
IPC分类号： H01L27/12 , H01L49/02 , H01L29/786 , H01L29/45
摘要： A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
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公开(公告)号：US09515175B2
公开(公告)日：2016-12-06
申请号：US14712245
申请日：2015-05-14
IPC分类号： H01L29/66 , H01L29/786 , H01L29/22
CPC分类号： H01L29/66969 , H01L29/22 , H01L29/7869
摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.
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公开(公告)号：US09059297B2
公开(公告)日：2015-06-16
申请号：US14445491
申请日：2014-07-29
IPC分类号： H01L29/786 , H01L29/22
CPC分类号： H01L29/66969 , H01L29/22 , H01L29/7869
摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.
摘要翻译： 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 在包含作为沟道保护膜的绝缘层设置在氧化物半导体膜上的底栅晶体管的半导体器件中，可以防止包含在蚀刻气体中的元素作为杂质残留在氧化物半导体膜的表面上 通过在形成设置在氧化物半导体膜上并与氧化物半导体膜接触并且/或形成源极和漏极电极层的绝缘层之后进行杂质去除处理。 氧化物半导体膜表面的杂质浓度低于或等于5×1018原子/ cm3，优选为1×1018原子/ cm3以下。
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公开(公告)号：US20150155313A1
公开(公告)日：2015-06-04
申请号：US14546443
申请日：2014-11-18
发明人： Shunpei Yamazaki , Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Yasuharu Hosaka , Toshimitsu Obonai
IPC分类号： H01L27/12 , H01L29/786 , H01L49/02
CPC分类号： H01L27/1255 , H01L28/20 , H01L28/24 , H01L28/60 , H01L29/45 , H01L29/7869 , H01L29/78693
摘要： A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
摘要翻译： 提供了一种新颖的半导体器件，其中在包括氧化物半导体膜的晶体管中使用含有铜（Cu）的金属膜用于布线，信号线等。 半导体器件包括在绝缘表面上具有导电性的氧化物半导体膜和与具有导电性的氧化物半导体膜接触的导电膜。 导电膜包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。
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公开(公告)号：US08846459B2
公开(公告)日：2014-09-30
申请号：US13652708
申请日：2012-10-16
IPC分类号： H01L21/335 , H01L29/786 , H01L21/02 , H01L21/3213 , H01L21/465 , H01L29/66
CPC分类号： H01L29/78693 , H01L21/02071 , H01L21/32136 , H01L21/465 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.
摘要翻译： 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件以实现高生产率。 在制造其中栅极电极层，栅极绝缘膜和氧化物半导体膜依次层叠的晶体管和提供与氧化物半导体膜接触的源电极层和漏电极层的晶体管的半导体器件的制造中， 通过蚀刻步骤形成源电极层和漏电极层，然后进行用于除去由蚀刻步骤产生并存在于氧化物半导体膜的表面及其附近的杂质的步骤。
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