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公开(公告)号：US11244847B2
公开(公告)日：2022-02-08
申请号：US16174683
申请日：2018-10-30
申请人： SEMES CO., LTD.
发明人： Harutyun Melikyan , Jong Hwan An , Jamyung Gu , Sang-Kee Lee , Young Bin Kim , Shin-Woo Nam
IPC分类号： H01L21/00 , H01L21/683 , H01L21/687 , H01L21/66 , H01J37/32 , H01J37/244 , H01L21/67
摘要： Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.
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公开(公告)号：US10319566B2
公开(公告)日：2019-06-11
申请号：US15962487
申请日：2018-04-25
申请人： SEMES CO., LTD.
发明人： Harutyun Melikyan , Ogsen Galstyan , Junghwan Lee , Jong Hwan An , Shin-Woo Nam
摘要： Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.
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3.发明授权公开(公告)号：US12125678B2
公开(公告)日：2024-10-22
申请号：US16880221
申请日：2020-05-21
申请人： SEMES CO., LTD.
IPC分类号： H01J3/32 , H01J37/32 , H01L21/683 , H03H7/01 , H01L21/67
CPC分类号： H01J37/32174 , H01J37/32724 , H01L21/6833 , H03H7/0115 , H03H7/0153 , H01J2237/334 , H01L21/67069
摘要： A substrate treating apparatus is disclosed. The substrate treating apparatus may include a chamber having a treating space defined therein, a support unit for supporting the substrate in the treating space, a heater power source for applying electric power to a heater in the support unit, a high-frequency power source for applying high-frequency power to a lower electrode in the support unit, and a filter unit installed at a line for connecting the heater power source with the heater to prevent high-frequency inflow. The filter unit may include a housing, one or more coils in the housing, and an adjustment member disposed between the housing and the coil. The adjustment member may be made of a non-magnetic material. The adjustment member may be spaced from the coil at a predefined spacing, and spaced apart from an inner wall of the housing or in contact with the housing inner wall.
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公开(公告)号：US20190131115A1
公开(公告)日：2019-05-02
申请号：US16174679
申请日：2018-10-30
申请人： SEMES CO., LTD.
发明人： Jamyung Gu , Jungmo Gu , Jun Ho Lee , Jong Hwan An , Saewon Na
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065 , H03H7/01
摘要： The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate, a gas supply unit configured to supply a gas into the treatment space, and a plasma source configured to generate plasma, wherein the support unit includes a support plate, on which the substrate is positioned, a ring assembly surrounding a circumference of the support plate and having a ring-shaped electrode, and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the ring-shaped electrode, and wherein the voltage applying unit includes a base plate of a conductive material, a DC power source configured to apply a DC voltage to the base plate, and a plurality of connecting bodies connecting the base plate and the ring-shaped electrode, formed of a conductive material.
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公开(公告)号：US20190088449A1
公开(公告)日：2019-03-21
申请号：US16120498
申请日：2018-09-04
申请人： Semes Co., Ltd.
发明人： Ogsen Galstyan , Harutyun Melikyan , Young Bin Kim , Jong Hwan An
IPC分类号： H01J37/32 , H01L21/683
摘要： Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas in the treatment space, wherein the plasma generating unit includes a high-frequency power source, a high-frequency antenna, to which a current is applied from the high-frequency power source, and an additional antenna provided to be spaced apart from the high-frequency antenna and to which a coupling current is applied from the high-frequency antenna.
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公开(公告)号：US11869749B2
公开(公告)日：2024-01-09
申请号：US16600554
申请日：2019-10-13
申请人： SEMES CO., LTD.
发明人： Shant Arakelyan , Ja Myung Gu , Jong Hwan An
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32183 , H01J37/32642 , H01J37/32715 , H01L21/6833 , H01J2237/332 , H01J2237/334
摘要： The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.
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公开(公告)号：US11545340B2
公开(公告)日：2023-01-03
申请号：US17089041
申请日：2020-11-04
申请人： SEMES CO., LTD.
发明人： Jong Hwan An , Shin-Woo Nam , Hong Won Lee , Jae Bak Shim
摘要： Disclosed are an apparatus for monitoring pulsed high-frequency power and a substrate processing apparatus including the same. The apparatus includes an attenuation module configured to attenuate a pulsed high-frequency power signal; a rectifier module configured to convert the pulsed high-frequency power signal into a direct current signal; and a detection module configured to detect a pulse parameter based on the direct current signal.
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公开(公告)号：US11195705B2
公开(公告)日：2021-12-07
申请号：US15937922
申请日：2018-03-28
申请人： SEMES CO., LTD.
发明人： Ogsen Galstyan , Junghwan Lee , Jong Hwan An , Shin-Woo Nam
摘要： Disclosed are a plasma generating unit and a substrate treating apparatus including the same. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a substrate support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a process gas into the treatment space, and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit includes an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas, and a magnetic structure including magnetic walls disposed between the plurality of antenna coils, and wherein the antenna unit includes a first antenna coil having a ring shape, and a second antenna coil disposed outside the first antenna coil and having a ring shape.
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公开(公告)号：US20190131159A1
公开(公告)日：2019-05-02
申请号：US16174683
申请日：2018-10-30
申请人： SEMES CO., LTD.
发明人： Harutyun Melikyan , Jong Hwan An , Jamyung Gu , Sang-Kee Lee , Young Bin Kim , Shin-Woo Nam
IPC分类号： H01L21/683 , H01L21/687 , H01L21/66 , H01J37/32 , H01J37/244
摘要： Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.
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