公开(公告)号：US11869749B2

公开(公告)日：2024-01-09

申请号：US16600554

申请日：2019-10-13

Applicant: SEMES CO., LTD.

Inventor： Shant Arakelyan ,  Ja Myung Gu ,  Jong Hwan An

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32183 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/332 ,  H01J2237/334

Abstract: The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.

公开(公告)号：US12051565B2

公开(公告)日：2024-07-30

申请号：US17527128

申请日：2021-11-15

Applicant: SEMES CO., LTD.

Inventor： Young Kuk Kim ,  Tae Hoon Jo ,  Goon Ho Park ,  Ja Myung Gu

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3244

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor.

公开(公告)号：US20230207265A1

公开(公告)日：2023-06-29

申请号：US18145413

申请日：2022-12-22

Applicant: SEMES CO., LTD.

Inventor： Shant ARAKELYAN ,  Ja Myung Gu ,  Ogsen Galstyan

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32128 ,  H01J37/32568 ,  H01J37/3244 ,  H01J2237/032 ,  H01J2237/334

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus may include a chamber having an inner space, an electrode configured to generate plasma in the inner space, and a power supply unit configured to apply an RF voltage to the electrode, in which the power supply unit may include a first power supply configured to apply a first pulse voltage having a first frequency to the electrode, a second power supply configured to apply a second pulse voltage having a second frequency different from the first frequency to the electrode, a third power supply configured to apply an RF voltage having a third frequency different from the first frequency and the second frequency, and a phase control member for controlling at least one of the phases of the first pulse voltage and the second pulse voltage.

公开(公告)号：US12125682B2

公开(公告)日：2024-10-22

申请号：US17563161

申请日：2021-12-28

Applicant: SEMES CO., LTD.

Inventor： Shant Arakelyan ,  Ja Myung Gu

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32532

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.

公开(公告)号：US12087547B2

公开(公告)日：2024-09-10

申请号：US17532082

申请日：2021-11-22

Applicant: SEMES Co., Ltd.

Inventor： Goon Ho Park ,  Jung Mo Gu ,  Ja Myung Gu ,  Hyun Jin Kim

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/3244

Abstract: Provided are an apparatus for multi-level pulsing, which minimizes power reflection when generating plasma using an RF signal having a plurality of pulsing levels, and a substrate processing apparatus including the same. The apparatus includes an RF signal generator for generating an RF signal including a first pulsing level and a second pulsing level that are different from each other, and a matching network for receiving the RF signal and providing a corresponding output signal to a load, wherein the RF signal generator generates the RF signal so that a first target impedance of the first pulsing level and a second target impedance of the second pulsing level are different from each other.

公开(公告)号：US20230215693A1

公开(公告)日：2023-07-06

申请号：US18147480

申请日：2022-12-28

Applicant: SEMES CO., LTD.

Inventor： Chan Yong AN ,  Ja Myung Gu ,  Sang Moon Yoo ,  Tae Hoon Jo

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32642 ,  H01J37/32091 ,  H01J37/32522 ,  H01J2237/334

Abstract: The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.

公开(公告)号：US11437220B2

公开(公告)日：2022-09-06

申请号：US16907208

申请日：2020-06-20

Applicant: SEMES CO., LTD.

Inventor： Ja Myung Gu ,  Shant Arakel Yan ,  Jung Mo Gu ,  Tae Hoon Jo

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.

公开(公告)号：US20220172927A1

公开(公告)日：2022-06-02

申请号：US17532082

申请日：2021-11-22

Applicant: SEMES Co., Ltd.

Inventor： Goon Ho Park ,  Jung Mo Gu ,  Ja Myung Gu ,  Hyun Jin Kim

IPC: H01J37/32

Abstract: Provided are an apparatus for multi-level pulsing, which minimizes power reflection when generating plasma using an RF signal having a plurality of pulsing levels, and a substrate processing apparatus including the same. The apparatus includes an RF signal generator for generating an RF signal including a first pulsing level and a second pulsing level that are different from each other, and a matching network for receiving the RF signal and providing a corresponding output signal to a load, wherein the RF signal generator generates the RF signal so that a first target impedance of the first pulsing level and a second target impedance of the second pulsing level are different from each other.