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公开(公告)号:US11869749B2
公开(公告)日:2024-01-09
申请号:US16600554
申请日:2019-10-13
申请人: SEMES CO., LTD.
发明人: Shant Arakelyan , Ja Myung Gu , Jong Hwan An
IPC分类号: H01J37/32 , H01L21/683
CPC分类号: H01J37/32183 , H01J37/32642 , H01J37/32715 , H01L21/6833 , H01J2237/332 , H01J2237/334
摘要: The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.
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公开(公告)号:US11587770B2
公开(公告)日:2023-02-21
申请号:US16913467
申请日:2020-06-26
申请人: SEMES CO., LTD.
发明人: Jamyung Gu , Jong-Hwan An , Goon Ho Park , Taehoon Jo , Shant Arakelyan
IPC分类号: H01J37/32
摘要: A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.
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公开(公告)号:US12125682B2
公开(公告)日:2024-10-22
申请号:US17563161
申请日:2021-12-28
申请人: SEMES CO., LTD.
发明人: Shant Arakelyan , Ja Myung Gu
IPC分类号: H01J37/32
CPC分类号: H01J37/32458 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32532
摘要: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.
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