公开(公告)号：US20230413551A1

公开(公告)日：2023-12-21

申请号：US17807819

申请日：2022-06-20

申请人： SANDISK TECHNOLOGIES LLC

发明人： Yao CHEN ,  Shigehisa INOUE ,  Kazuto OHSAWA ,  Hisaya SAKAI

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L23/522 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L27/11519

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L23/5226 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L23/5283

摘要： A memory die includes first and second memory-region alternating stacks of memory-region insulating layers and electrically conductive layers that are laterally spaced apart from each other by a respective first portion of a retro-stepped dielectric structure overlying first stepped surfaces of the first and second memory-region alternating stacks, memory opening fill structures located the first and second memory-region alternating stacks, and a peripheral alternating stack of peripheral insulating layers and spacer material which is laterally spaced from the second memory-region alternating stack by a second portion of the retro-stepped dielectric structure overlying second stepped surfaces of the second memory-region alternating stack. Bottom surfaces of the first and second memory-region alternating stacks are spaced apart by a first lateral spacing distance, and bottom surfaces of the second memory alternating stack and the peripheral alternating stack are spaced apart by the first lateral spacing distance.