公开(公告)号：US20230345720A1

公开(公告)日：2023-10-26

申请号：US17660278

申请日：2022-04-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Nao NAGASE ,  Chiko KUDO ,  Tsutomu IMAI

IPC: H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L27/11556

Abstract: A sacrificial memory opening fill structure for a multi-tier memory device may include a semiconductor fill material portion a metallic fill material portion to enhance control of a vertical cross-sectional profile of an inter-tier memory opening. Multiple inter-tier dielectric layers may be employed to reduce sharp corners in a memory opening fill structure. Alternatively or additionally, a combination of an isotropic etch process followed by an anisotropic etch process may be used to form a first-tier memory opening.

公开(公告)号：US20230345716A1

公开(公告)日：2023-10-26

申请号：US17660265

申请日：2022-04-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tsutomu IMAI ,  Nao NAGASE ,  Chiko KUDO ,  Sadao FUKUNO

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

CPC classification number: H01L27/11556 ,  H01L27/11582 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

Abstract: A sacrificial memory opening fill structure for a multi-tier memory device may include a semiconductor fill material portion a metallic fill material portion to enhance control of a vertical cross-sectional profile of an inter-tier memory opening. Multiple inter-tier dielectric layers may be employed to reduce sharp corners in a memory opening fill structure. Alternatively or additionally, a combination of an isotropic etch process followed by an anisotropic etch process may be used to form a first-tier memory opening.