公开(公告)号：US11086224B2

公开(公告)日：2021-08-10

申请号：US16676588

申请日：2019-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunhee Bai ,  Jinhong Park ,  Jinseok Heo ,  Seungmin Lee ,  Suntaek Lim

IPC: G03F7/20 ,  H01L21/268

Abstract: Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.

公开(公告)号：US20240274416A1

公开(公告)日：2024-08-15

申请号：US18430475

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesik An ,  Dongig Oh ,  Thanh Cuong Nguyen ,  Suntaek Lim ,  Seungmin Lee ,  Inkook Jang ,  Joohyun Jeon

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32926 ,  H01J37/3476 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Provided is a plasma process simulation method including defining a plasma reaction for a wafer, calculating a reaction parameter of the plasma reaction, and generating a plasma process simulation profile based on a calculated reaction parameter. The reaction parameter are set based on a physical reaction and a chemical reaction.

公开(公告)号：US10993019B2

公开(公告)日：2021-04-27

申请号：US16710361

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Sungjoo Kim ,  Hoseon Ahn ,  Jongbae Kim ,  Namkeun Kim ,  Jihoon Kim ,  Dongkyu Park ,  Suntaek Lim

IPC: H04R1/02 ,  H04R9/06 ,  H04R1/28

Abstract: Disclosed is a display apparatus. The display apparatus comprises a display; and a speaker wherein the speaker comprises a driver configured to output sound based on an input sound signal; an enclosure surrounding a rear side of the driver; and an air adsorption member comprising graphene provided in the enclosure.
Based on the above, low-range reproduction capability of the speaker of the display apparatus may be improved and the degree of freedom in designing the speaker may be increased.

公开(公告)号：US20200348599A1

公开(公告)日：2020-11-05

申请号：US16676588

申请日：2019-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunhee Bai ,  Jinhong Park ,  Jinseok Heo ,  Seungmin Lee ,  Suntaek Lim

IPC: G03F7/20 ,  H01L21/268

Abstract: Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.