公开(公告)号：US20240274416A1

公开(公告)日：2024-08-15

申请号：US18430475

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesik An ,  Dongig Oh ,  Thanh Cuong Nguyen ,  Suntaek Lim ,  Seungmin Lee ,  Inkook Jang ,  Joohyun Jeon

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32926 ,  H01J37/3476 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Provided is a plasma process simulation method including defining a plasma reaction for a wafer, calculating a reaction parameter of the plasma reaction, and generating a plasma process simulation profile based on a calculated reaction parameter. The reaction parameter are set based on a physical reaction and a chemical reaction.