公开(公告)号：US20230048180A1

公开(公告)日：2023-02-16

申请号：US17872634

申请日：2022-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Segab Kwon ,  Hyoshin Ahn ,  Daesin Kim ,  Inkook Jang

IPC: H01L27/24

Abstract: A memory device includes a plurality of first conductive lines on a substrate and extending in a first direction, a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction, and a plurality of memory cells respectively between the plurality of first conductive lines and the plurality of second conductive lines. Each of the plurality of memory cells includes a switching element and a variable resistance material layer. The switching element includes a material having a composition of [GeX PY SeZ](1-W) [O]W, where 0.15≤X≤0.50, 0.15≤Y≤0.50, 0.35≤Z≤0.70, and 0.01≤W≤0.10.

公开(公告)号：US20240274416A1

公开(公告)日：2024-08-15

申请号：US18430475

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesik An ,  Dongig Oh ,  Thanh Cuong Nguyen ,  Suntaek Lim ,  Seungmin Lee ,  Inkook Jang ,  Joohyun Jeon

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32926 ,  H01J37/3476 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Provided is a plasma process simulation method including defining a plasma reaction for a wafer, calculating a reaction parameter of the plasma reaction, and generating a plasma process simulation profile based on a calculated reaction parameter. The reaction parameter are set based on a physical reaction and a chemical reaction.

公开(公告)号：US10347684B2

公开(公告)日：2019-07-09

申请号：US15848733

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Honglae Park ,  Jaeho Kim ,  Hyoshin Ahn ,  Inkook Jang

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/0248 ,  H04N5/361

Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.