公开(公告)号：US09589640B2

公开(公告)日：2017-03-07

申请号：US14991173

申请日：2016-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Sang-Hwa Han ,  Seungkyung Ro

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/06 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/34 ,  G11C16/32

CPC classification number: G11C16/0483 ,  G11C16/0466 ,  G11C16/06 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/349 ,  G11C16/3495

Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

Abstract translation: 提供了一种操作包括非易失性存储装置和存储器控制器的数据存储装置的方法。 该方法包括从多条选择线与参考电压读取连接到第一选择线的第一选择晶体管，确定来自第一选择晶体管的第一数量的选择晶体管是否具有小于 参考电压大于第一参考值，并且如果第一数量大于第一参考值，则将第一选择晶体管编程为具有大于或等于目标电压的阈值电压。