-
1.发明申请USER DEVICE HAVING A HOST FLASH TRANSLATION LAYER (FTL), A METHOD FOR TRANSFERRING AN ERASE COUNT THEREOF, A METHOD FOR TRANSFERRING REPROGRAM INFORMATION THEREOF, AND A METHOD FOR TRANSFERRING A PAGE OFFSET OF AN OPEN BLOCK THEREOF 有权具有主机闪存转换层（FTL）的用户设备，用于传输其消除计数的方法，用于传送其转发信息的方法以及用于传送其开放块的页面偏移的方法公开(公告)号：US20150143035A1
公开(公告)日：2015-05-21
申请号：US14540122
申请日：2014-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wan-Soo Choi , Jun-Ho Jang , Yonghwan Song , Min-Woo Kim , Woonjae Chung
CPC classification number: G06F3/0661 , G06F3/0619 , G06F3/0679 , G11C16/102
Abstract: A user device includes a storage device including a flash memory; and a host connected to the storage device via an interface and adapted to transmit data to the storage device. The host provides the storage device with erase count information of the flash memory using a host flash translation layer (FTL), provides the storage device with reprogram information when the flash memory uses a reprogram method, or provides the storage device with page offset information of an open block of the flash memory.
Abstract translation: 一种用户设备包括一个包括闪速存储器的存储设备; 以及经由接口连接到存储设备并适于向存储设备发送数据的主机。 主机使用主机闪存转换层（FTL）向存储设备提供闪存的擦除计数信息，当闪速存储器使用重新编程方法时向存储设备提供重新编程信息，或者为存储设备提供页面偏移信息 一个开放的闪存块。
-
Patent Agency Ranking
公开(公告)号：US09275742B2
公开(公告)日：2016-03-01
申请号：US14491156
申请日：2014-09-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-Ho Jang , In-Hwan Choi , Woon-Jae Chung , Song-Ho Yoon , Kyung-Wook Ye
CPC classification number: G11C16/10 , G06F11/1068 , G06F12/0246 , G06F2212/7208 , G11C11/5628 , G11C11/5671 , G11C16/26 , G11C29/52
Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
-
3.发明授权Memory system, program method thereof, and computing system including the same 有权存储器系统，其程序方法和包括其的计算系统公开(公告)号：US09030876B2
公开(公告)日：2015-05-12
申请号：US14139175
申请日：2013-12-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-Ho Jang , In-Hwan Choi , Woon-Jae Chung , Song-Ho Yoon , Kyung-Wook Ye
CPC classification number: G11C16/10 , G06F11/1068 , G06F12/0246 , G06F2212/7208 , G11C11/5628 , G11C11/5671 , G11C16/26 , G11C29/52
Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
Abstract translation: 公开了一种存储系统和一种编程多位闪存设备的方法，该多位闪存设备包括被配置为存储多位数据的存储器单元，其中该方法包括并且该系统被配置用于确定要存储在所选存储器单元中的数据 是一个LSB数据; 并且如果要存储在所选择的存储单元中的数据不是LSB数据，则将存储在所选存储单元中的较低数据备份到多位闪存器件的备份存储器块。
-
公开(公告)号：US09612773B2
公开(公告)日：2017-04-04
申请号：US14540122
申请日：2014-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wan-Soo Choi , Jun-Ho Jang , Yonghwan Song , Min-Woo Kim , Woonjae Chung
CPC classification number: G06F3/0661 , G06F3/0619 , G06F3/0679 , G11C16/102
Abstract: A user device includes a storage device including a flash memory; and a host connected to the storage device via an interface and adapted to transmit data to the storage device. The host provides the storage device with erase count information of the flash memory using a host flash translation layer (FTL), provides the storage device with reprogram information when the flash memory uses a reprogram method, or provides the storage device with page offset information of an open block of the flash memory.
-
公开(公告)号：US10672451B2
公开(公告)日：2020-06-02
申请号：US15947442
申请日：2018-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung Il Bang , Jun-Ho Jang , Dong Gi Lee
Abstract: A storage device and a refresh method thereof are provided. The storage device includes at least a first processing core configured to operate by receiving a first power from a host, a second processing core separate from the first processing core, at least a first three-dimensional (3D) flash memory, a power module and a retention management module supplied with a second power from the power module when the first power is not supplied from the host. The retention management module is configured to refresh a part of the first 3D flash memory using the second processing core. The retention management module is configured to be woken up at intervals of a first period to refresh the part of the first 3D flash memory.
-
公开(公告)号：US09460796B2
公开(公告)日：2016-10-04
申请号：US14831116
申请日：2015-08-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-Ho Jang , In-Hwan Choi , Woon-Jae Chung , Song-Ho Yoon , Kyung-Wook Ye
CPC classification number: G11C16/10 , G06F11/1068 , G06F12/0246 , G06F2212/7208 , G11C11/5628 , G11C11/5671 , G11C16/26 , G11C29/52
Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
-
-
-
-
-
Search Results
6
records
(took 0.015 seconds)
