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公开(公告)号：US12145782B2
公开(公告)日：2024-11-19
申请号：US17688418
申请日：2022-03-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wooram Hong , Hyun Do Choi , Dal Heo , Youngchun Kwon , Hyukju Kwon , Gahee Kim , Bosung Kim , Jeonghun Kim , Jin Woo Kim , Min Sik Park , Youngjin Park , Hyungtae Seo , Won Seok Oh , Dongseon Lee , Sangyoon Lee , Jaejun Chang , Jun-Won Jang , Hyunjeong Jeon , Joon-Kee Cho , Byung-Kwon Choi , Won Je Choi , Younsuk Choi , Taesin Ha
Abstract: A sealing structure may include a lid including a first lid face, a second lid face opposite to the first lid face, and a fragile area between the first lid face and the second lid face, a cover including a first cover face facing the second lid face and covering the fragile area and a second cover face opposite to the first cover face, wherein a first distance between the second lid face and the first cover face is substantially equal to or less than a second distance between the first cover face and the second cover face, and a connector configured to connect the lid and the cover.
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公开(公告)号：US12135170B2
公开(公告)日：2024-11-05
申请号：US17888213
申请日：2022-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wooram Hong , Hyun Do Choi , Dal Heo , Youngchun Kwon , Hyukju Kwon , Gahee Kim , Bosung Kim , Jeonghun Kim , Jin Woo Kim , Min Sik Park , Youngjin Park , Hyungtae Seo , Won Seok Oh , Dongseon Lee , Sangyoon Lee , Jaejun Chang , Jun-Won Jang , Hyunjeong Jeon , Joon-Kee Cho , Byung-Kwon Choi , Won Je Choi , Younsuk Choi , Taesin Ha
IPC: F28D9/00
Abstract: A heat exchanger is provided. The heat exchanger includes a target area that is a target for heat exchange; and a flow path structure. The flow path structure includes at least one inlet; at least one outlet; a first flow path connected to each of the at least one inlet and the at least one outlet, and extending along a first side of the target area; and a second flow path connected to each of the at least one inlet and the at least one outlet, and extending along a second side, different from the first side, of the target area.
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公开(公告)号：US11476341B2
公开(公告)日：2022-10-18
申请号：US17105868
申请日：2020-11-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ju Youn Kim , Sang Jung Kang , Jin Woo Kim , Seul Gi Yun
IPC: H01L29/417 , H01L29/06 , H01L29/786
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region, a first gate structure extending in a first direction on the first region of the substrate, the first gate structure including a first gate insulation film and a first work function film disposed on the first gate insulation film, and a second gate structure extending in the first direction on the second region of the substrate, the second gate structure including a second gate insulation film and a second work function film disposed on the second gate insulation film, wherein a first thickness of the first work function film in a second direction intersecting the first direction is different from a second thickness of the second work function film in the second direction, and wherein a first height of the first work function film in a third direction perpendicular to the first and second directions is different from a second height of the second work function film in the third direction.
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公开(公告)号：US10342127B2
公开(公告)日：2019-07-02
申请号：US15351087
申请日：2016-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Hoon Park , Jin Woo Kim , Dae Kwang Kim
Abstract: An electronic device including reinforced printed circuit board is provided. The electronic device includes the printed circuit board including a first area, and a second area that extends from a first end of the first area. A width of the second area is smaller than a width of the first area, and at least a portion of a surface of the second area is covered by a material layer that provides the second area with a specific strength.
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公开(公告)号：US20180139862A1
公开(公告)日：2018-05-17
申请号：US15351087
申请日：2016-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Hoon Park , Jin Woo Kim , Dae Kwang Kim
CPC classification number: H05K1/09 , H05K1/0271 , H05K2201/09063 , H05K2201/10363 , H05K2201/2009
Abstract: An electronic device including reinforced printed circuit board is provided. The electronic device includes the printed circuit board including a first area, and a second area that extends from a first end of the first area. A width of the second area is smaller than a width of the first area, and at least a portion of a surface of the second area is covered by a material layer that provides the second area with a specific strength.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20140049539A1
公开(公告)日：2014-02-20
申请号：US13958116
申请日：2013-08-02
Inventor： Won Jong Lee , Young Sam Shin , Jae Don Lee , Jin Woo Kim , Hun Sang Park
CPC classification number: G06T1/20 , G06T15/005 , G06T15/06 , G06T2210/52
Abstract: An apparatus and method for ray tracing includes a traversal (TRV) unit using a tree acceleration structure (AS). The TRV unit may include a plurality of sub-pipeline units configured to perform different operations required for ray TRV using the tree AS and to operate in parallel.
Abstract translation: 用于光线跟踪的装置和方法包括使用树加速结构（AS）的遍历（TRV）单元。 TRV单元可以包括多个子流水线单元，其被配置为使用树AS执行对于射线TRV所需的不同操作并且并行操作。
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公开(公告)号：US11563002B2
公开(公告)日：2023-01-24
申请号：US16418366
申请日：2019-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Woo Kim , Choelhwyi Bae , Yang Gyeom Kim , Sung Eun Kim , Sang Woo Pae , Hyun Chui Sagong
IPC: H01L27/092 , H01L27/11 , H01L29/40 , H01L21/8238 , H01L21/28 , H01L21/765 , H01L29/49
Abstract: A semiconductor device includes a first fin that protrudes from a substrate and extends in a first direction, a second fin that protrudes from the substrate and extends in the first direction, the first fin and the second fin being spaced apart, a gate line including a dummy gate electrode and a gate electrode, the dummy gate electrode at least partially covering the first fin, the gate electrode at least partially covering the second fin, the dummy gate electrode including different materials from the gate electrode, the gate line covering the first fin and the second fin, the gate line extending in a second direction different from the first direction, and a gate dielectric layer between the gate electrode and the second fin.
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8.发明授权公开(公告)号：US11245018B2
公开(公告)日：2022-02-08
申请号：US16415633
申请日：2019-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun Chul Sagong , Sung Eun Kim , Jin Woo Kim , June Kyun Park , Sang Woo Pae , Ki Hyun Choi
IPC: H01L29/423 , H01L27/088 , H01L27/02 , H01L27/092 , H01L27/11 , H01L29/66 , H01L21/8234 , H01L21/84
Abstract: A semiconductor device may include an active region extending primarily in a first direction on a substrate. A gate structure may be disposed to intersect the active region, and extend primarily in a second direction intersecting the first direction. A gate isolation pattern may contact one end of the gate structure. The gate structure may include a plurality of portions each having different widths in the first direction, and the gate isolation pattern may have a width greater than a width of at least one of the plurality of portions of the gate structure.
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公开(公告)号：US10997882B2
公开(公告)日：2021-05-04
申请号：US16261779
申请日：2019-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Oh Kim , Sung Jin Lim , Chul Ho Choi , Ryan Wang , Dashih Chang , Ha Joon Shin , Hanss Su , Jin Soo Kim , Jin Woo Kim , Kyung Gyu Park , Sam Liu , Yao Sheng Liang
Abstract: A display device including: a panel unit including N data lines; and a data line driver unit including N channels, wherein the data line driver unit includes a channel amplifier unit, and a short detection device for detecting whether or not a short has occurred between two data lines among the N data lines, wherein N is an integer of 2 or more.
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公开(公告)号：US10509744B2
公开(公告)日：2019-12-17
申请号：US15844165
申请日：2017-12-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Ho Lee , Sung Roh Yoon , Eui Young Chung , Jin Woo Kim , Young Jin Cho , Myeong Jin Kim , Sei Joon Kim , Jeong Bin Kim , Hyeok Jun Choe
Abstract: A semiconductor system includes a CPU connected to a heterogeneous memory module via a system bus. The heterogeneous memory module includes; a volatile memory module, a nonvolatile memory module, an internal bus separate from the system bus and connecting the volatile memory module and the nonvolatile memory module, and a swap manager configured to control execution of a swap operation transferring target data between the volatile memory module and nonvolatile memory module using the internal bus and without using of the system bus.
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