公开(公告)号：US12071690B2

公开(公告)日：2024-08-27

申请号：US16827895

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae Han ,  Jeonggyu Song ,  Yongsung Kim ,  Jooho Lee

IPC: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/455 ,  H10B12/00 ,  H10B53/00

CPC classification number: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/081 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45525 ,  H10B12/00 ,  H10B53/00 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

公开(公告)号：US20230207613A1

公开(公告)日：2023-06-29

申请号：US18170977

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jaeho Lee

IPC: H10B12/00

CPC classification number: H01L28/40 ,  H01L28/75 ,  H10B12/31

Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

公开(公告)号：US11810946B2

公开(公告)日：2023-11-07

申请号：US17749702

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H10B12/00 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L21/28556 ,  H10B12/30

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US11594592B2

公开(公告)日：2023-02-28

申请号：US17060911

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jaeho Lee

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

公开(公告)号：US11081338B2

公开(公告)日：2021-08-03

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo Kim ,  Haeryong Kim ,  Seungmin Ryu ,  Sunmin Moon ,  Jeonggyu Song ,  Changsu Woo ,  Kyooho Jung ,  Younjoung Cho

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US11869926B2

公开(公告)日：2024-01-09

申请号：US17146894

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jooho Lee ,  Narae Han

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/60 ,  H10B12/315 ,  H10B12/34

Abstract: Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

公开(公告)号：US11658024B2

公开(公告)日：2023-05-23

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Yongsung Kim ,  Jeongil Bang ,  Jooho Lee ,  Junghwa Kim ,  Haeryong Kim ,  Myoungho Jeong

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02667 ,  H01L21/76871 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US11424317B2

公开(公告)日：2022-08-23

申请号：US16839641

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US12051717B2

公开(公告)日：2024-07-30

申请号：US17702155

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boeun Park ,  Yongsung Kim ,  Jeonggyu Song ,  Jooho Lee

IPC: H10B53/00 ,  H01L49/02

CPC classification number: H01L28/56 ,  H10B53/00

Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

公开(公告)号：US12034036B2

公开(公告)日：2024-07-09

申请号：US17334030

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Haeryong Kim ,  Boeun Park ,  Eunha Lee ,  Jooho Lee ,  Hyangsook Lee ,  Yong-Hee Cho ,  Eunae Cho

IPC: H01L29/08 ,  H01L49/02

CPC classification number: H01L28/65 ,  H01L28/56 ,  H01L29/0847

Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.