公开(公告)号：US20140313847A1

公开(公告)日：2014-10-23

申请号：US14250460

申请日：2014-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONG-HWAN JEONG ,  YANG-KI KIM ,  SEOK-HUN HYUN ,  JUNG-HWAN CHOI

IPC: H03L7/08 ,  G11C8/18

CPC classification number: G11C8/18 ,  G11C7/222 ,  H03L7/0814 ,  H03L7/0816 ,  H03L7/095 ,  H03L7/10

Abstract: A clock synchronization circuit includes a delay-locked loop (DLL) and a delay-locked control unit. The DLL is configured to generate an output clock signal by delaying an input clock signal by a delay time, and to execute a delay-locking operation in which the delay time is adjusted to a locked state according to a comparison between the output clock signal and the input clock signal. The delay-locked control unit configured to detect the locked state of the DLL, and to control the DLL based on the determined locked state

Abstract translation: 时钟同步电路包括延迟锁定环（DLL）和延迟锁定控制单元。 DLL被配置为通过将输入时钟信号延迟延迟时间来产生输出时钟信号，并且执行延迟锁定操作，其中延迟时间根据输出时钟信号和 输入时钟信号。 所述延迟锁定控制单元被配置为检测所述DLL的锁定状态，并且基于所确定的锁定状态来控制所述DLL

公开(公告)号：US20230274776A1

公开(公告)日：2023-08-31

申请号：US18314243

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAE-SIK MOON ,  GIL-HOON CHA ,  KI-SEOK OH ,  CHANG-KYO LEE ,  YEON-KYU CHOI ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA ,  SEOK-HUN HYUN

IPC: G11C11/4076 ,  G11C11/409 ,  G06F3/06 ,  G11C7/22

CPC classification number: G11C11/4076 ,  G11C11/409 ,  G06F3/0673 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0604 ,  G11C7/222

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

公开(公告)号：US20140149631A1

公开(公告)日：2014-05-29

申请号：US14091385

申请日：2013-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONG-KYOUM KIM ,  IN-DAL SONG ,  JUNG-HWAN CHOI

IPC: G06F13/16 ,  G06F13/40

CPC classification number: G06F13/1689 ,  G06F13/4022

Abstract: A memory module includes memory devices arranged in ranks and columns and designated in first and second groupings, the first grouping includes memory devices arranged in only a first rank nearest a memory controller and directly connected to the memory controller, the memory devices in the second grouping are indirectly connected to the memory controller via a corresponding memory device in the first grouping arranged in a same column, and each memory device selectively provides either self-data retrieved from a constituent memory core or other-data retrieved from a memory core of another memory device during the read operation.

Abstract translation: 存储器模块包括以列和列排列并且在第一和第二组中指定的存储器件，第一组包括只排列在最靠近存储器控制器并且直接连接到存储器控制器的第一级的存储器件，第二组中的存储器件 经由布置在同一列中的第一组中的相应存储器件间接地连接到存储器控制器，并且每个存储器件选择性地提供从组成存储器核心检索的自身数据或从另一存储器的存储器核心检索的其他数据 读取操作期间的设备。

公开(公告)号：US20220383931A1

公开(公告)日：2022-12-01

申请号：US17816138

申请日：2022-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： DAE-SIK MOON ,  GIL-HOON CHA ,  KI-SEOK OH ,  CHANG-KYO LEE ,  YEON-KYU CHOI ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA ,  SEOK-HUN HYUN

IPC: G11C11/4076 ,  G11C7/22 ,  G11C11/409 ,  G06F3/06

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

公开(公告)号：US20200135247A1

公开(公告)日：2020-04-30

申请号：US16721131

申请日：2019-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-HOON SON ,  SI-HONG KIM ,  CHANG-KYO LEE ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA

IPC: G11C7/24 ,  G11C7/10 ,  H03H7/38

Abstract: A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.

公开(公告)号：US20180374823A1

公开(公告)日：2018-12-27

申请号：US15995181

申请日：2018-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-HOON SON ,  JUNG-HWAN CHOI ,  SEOK-HUN HYUN

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538 ,  H01L21/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/498

Abstract: A semiconductor package includes a first layer of one or more first semiconductor chips each having a first surface at which one or more first pads are exposed, a second layer of one or more second semiconductor chips disposed over the first layer and each having a second surface at which one or more second pads are exposed, and a first redistribution layer between the first layer and the second layer and electrically connected to the one or more first pads. The first layer may include one or more first TPVs extending through a substrate (panel) of the first layer and electrically connected to the first redistribution layer.

公开(公告)号：US20220122648A1

公开(公告)日：2022-04-21

申请号：US17564564

申请日：2021-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAE-SIK MOON ,  GIL-HOON CHA ,  KI-SEOK OH ,  CHANG-KYO LEE ,  YEON-KYU CHOI ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA ,  SEOK-HUN HYUN

IPC: G11C11/4076 ,  G11C11/409 ,  G06F3/06 ,  G11C7/22

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

公开(公告)号：US20210166749A1

公开(公告)日：2021-06-03

申请号：US17148915

申请日：2021-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAE-SIK MOON ,  GIL-HOON CHA ,  KI-SEOK OH ,  CHANG-KYO LEE ,  YEON-KYU CHOI ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA ,  SEOK-HUN HYUN

IPC: G11C11/4076 ,  G11C11/409 ,  G06F3/06 ,  G11C7/22

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

公开(公告)号：US20200243123A1

公开(公告)日：2020-07-30

申请号：US16848364

申请日：2020-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-HOON SON ,  SI-HONG KIM ,  CHANG-KYO LEE ,  JUNG-HWAN CHOI ,  KYUNG-SOO HA

IPC: G11C7/24 ,  H03H7/38 ,  G11C7/10

Abstract: A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on;enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.

公开(公告)号：US20150147068A1

公开(公告)日：2015-05-28

申请号：US14552601

申请日：2014-11-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONG-KYOUM KIM ,  SEOK-HUN HYUN ,  IN-DAL SONG ,  SEONG-JIN JANG ,  JUNG-HWAN CHOI

IPC: H04B10/572

CPC classification number: H04B10/572 ,  H04B10/506 ,  H04B10/671 ,  H04B10/801 ,  H04J14/0278

Abstract: An optical transmission converter comprises a wavelength selector configured to output a reception wavelength selection signal and a transmission wavelength selection signal in response to a wavelength control signal, an opto-electrical converter configured to convert a selection optical signal into a reception electrical signal based on a reception optical signal from a host device and the reception wavelength selection signal, and an electro-optical converter configured to convert a transmission electrical signal into a transmission optical signal based on the transmission wavelength selection signal and the transmission electrical signal.

Abstract translation: 一种光传输转换器，包括：波长选择器，被配置为响应于波长控制信号输出接收波长选择信号和传输波长选择信号;光电转换器，被配置为基于选择光信号将选择光信号转换为接收电信号 接收光信号和接收波长选择信号，以及电光转换器，被配置为基于传输波长选择信号和传输电信号将传输电信号转换为传输光信号。