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公开(公告)号：US20240107770A1
公开(公告)日：2024-03-28
申请号：US18530049
申请日：2023-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： So Hyeon Lee , Sung Su Moon , Jae Duk Lee , Ik-Hyung Joo
CPC classification number: H10B43/27 , H01L23/5226 , H10B41/10 , H10B41/27 , H10B41/40 , H10B43/10 , H10B43/40
Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.
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公开(公告)号：US11877450B2
公开(公告)日：2024-01-16
申请号：US17158494
申请日：2021-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： So Hyeon Lee , Sung Su Moon , Jae Duk Lee , Ik-Hyung Joo
CPC classification number: H10B43/27 , H01L23/5226 , H10B41/10 , H10B41/27 , H10B41/40 , H10B43/10 , H10B43/40
Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.
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公开(公告)号：US12302572B2
公开(公告)日：2025-05-13
申请号：US18530049
申请日：2023-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： So Hyeon Lee , Sung Su Moon , Jae Duk Lee , Ik-Hyung Joo
Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.
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公开(公告)号：US20220013538A1
公开(公告)日：2022-01-13
申请号：US17158494
申请日：2021-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： So Hyeon Lee , Sung Su Moon , Jae Duk Lee , Ik-Hyung Joo
IPC: H01L27/11582 , H01L23/522 , H01L27/11565 , H01L27/11573 , H01L27/11519 , H01L27/11556 , H01L27/11526
Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.
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