公开(公告)号：US10367003B2

公开(公告)日：2019-07-30

申请号：US15485579

申请日：2017-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-hwan Kang ,  Heon-kyu Lee ,  Kohji Kanamori ,  Jae-duk Lee ,  Jae-hoon Jang ,  Kwang-soo Kim

IPC: H01L31/112 ,  H01L31/036 ,  H01L29/76 ,  H01L29/10 ,  H01L27/11582 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/04 ,  H01L29/16 ,  H01L27/11573

Abstract: A vertical non-volatile memory device includes a substrate including a cell region; a lower insulating layer on the substrate; a lower wiring pattern in the cell region having a predetermined pattern and connected to the substrate through the lower insulating layer; and a plurality of vertical channel layers extending in a vertical direction with respect to a top surface of the substrate in the cell region, spaced apart from one another in a horizontal direction with respect to the top surface of the substrate, and electrically connected to the lower wiring pattern. The memory device also includes a plurality of gate electrodes stacked alternately with interlayer insulating layers in the cell region in the vertical direction along a side wall of a vertical channel layer and formed to extend in a first direction along the horizontal direction.