公开(公告)号：US20190325952A1

公开(公告)日：2019-10-24

申请号：US16503169

申请日：2019-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WON PARK ,  DONGKYO SHIM ,  KITAE PARK ,  SANG-WON SHIM

IPC: G11C11/56 ,  G11C29/02 ,  G11C16/08 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34 ,  G11C8/08

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

公开(公告)号：US20150078095A1

公开(公告)日：2015-03-19

申请号：US14322335

申请日：2014-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WON PARK ,  DONGKYO SHIM ,  KITAE PARK ,  SANG-WON SHIM

IPC: G11C16/26

CPC classification number: G11C11/5642 ,  G11C8/08 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

Abstract translation: 非易失性存储器件包括：电压发生器，其向存储单元阵列的字线依次提供第一设定电压和第二设定电压;以及控制逻辑，包括时间控制单元，所述时间控制单元确定所述字线的字线建立时间 基于所述第一和第二设定电压之间的差，将所述第二设置电压提供给所述第二设置电压。

公开(公告)号：US20170062046A1

公开(公告)日：2017-03-02

申请号：US15351552

申请日：2016-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WON PARK ,  DONGKYO SHIM ,  KITAE PARK ,  SANG-WON SHIM

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/08 ,  G11C16/04

CPC classification number: G11C11/5642 ,  G11C8/08 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

Abstract translation: 非易失性存储器件包括：电压发生器，其向存储单元阵列的字线依次提供第一设定电压和第二设定电压;以及控制逻辑，包括时间控制单元，所述时间控制单元确定所述字线的字线建立时间 基于所述第一和第二设定电压之间的差，将所述第二设置电压提供给所述第二设置电压。

公开(公告)号：US20140025866A1

公开(公告)日：2014-01-23

申请号：US13915676

申请日：2013-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BOH-CHANG KIM ,  DONGKYO SHIM ,  KITAE PARK

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G11C11/5642 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3459

Abstract: A method of programming data in a nonvolatile memory via a first memory cell group and a second memory cell group in a page of memory cells includes; executing a first program operation that programs the first memory cell group with a first program voltage that is stepwise adjusted by a first increment over successive programming loop iterations, and thereafter executing a second program operation that programs the second memory cell with a second program voltage that is stepwise adjusted by a second increment over successive programming loop iterations, wherein the first program voltage is different from the second program voltage.

Abstract translation: 一种在存储单元的页面中经由第一存储单元组和第二存储单元组在非易失性存储器中编程数据的方法包括： 执行第一编程操作，其以在连续编程循环迭代中由第一增量逐步调整的第一编程电压对第一存储单元组进行编程，然后执行第二编程操作，其以第二编程电压编程第二存储单元， 在连续的编程循环迭代中通过第二增量逐步调整，其中第一编程电压与第二编程电压不同。

公开(公告)号：US20160254038A1

公开(公告)日：2016-09-01

申请号：US15151687

申请日：2016-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGHUN KWAK ,  HYUN JUN YOON ,  DONGKYO SHIM

IPC: G11C7/22 ,  G11C7/10

CPC classification number: G11C7/22 ,  G11C7/10 ,  G11C7/1063 ,  G11C16/0483 ,  G11C16/26

Abstract: A nonvolatile memory device includes a cell array including a plurality of cell strings extending on a substrate in a vertical direction, a page buffer connected to a plurality of bit lines and configured to store sensing data of the cell array in a sensing operation, a voltage generator configured to provide voltages to a plurality of word lines and the plurality of bit lines, and an input/output buffer configured to temporarily store the sensing data received in a data dump from the page buffer and to output the temporarily stored data to an external device. The nonvolatile memory device further includes control logic configured to set a status of the nonvolatile memory device to a ready state after the sensing data is dumped to the input/output buffer and before recovery of the cell array from a bias voltage of the sensing operation is complete.

Abstract translation: 一种非易失性存储器件，包括一个单元阵列，该单元阵列包括在垂直方向上在基片上延伸的多个单元串，连接到多个位线的一个页缓冲器，并且被配置为在感测操作中存储该单元阵列的感测数据， 发生器，其被配置为向多个字线和所述多个位线提供电压;以及输入/输出缓冲器，被配置为临时存储从所述页缓冲器接收的数据转储中的感测数据，并将所述临时存储的数据输出到外部 设备。 非易失性存储装置还包括控制逻辑，其被配置为在将感测数据转储到输入/输出缓冲器之后并且在从感测操作的偏置电压恢复单元阵列之前将非易失性存储器件的状态设置为就绪状态 完成。