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公开(公告)号：US10857648B2
公开(公告)日：2020-12-08
申请号：US15725987
申请日：2017-10-05
IPC分类号： B24B37/26 , H01L21/306
摘要： The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix and radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region includes a series of spaced non-isosceles trapezoid groove structures having parallel base segments connecting two adjacent radial feeder grooves to form leg segments. The series of non-isosceles trapezoid groove structures extend from adjacent the outer edge toward the center of the polishing pad with the perimeter of the series of trapezoid structures also being a trapezoid.
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公开(公告)号：US10569383B2
公开(公告)日：2020-02-25
申请号：US15705561
申请日：2017-09-15
摘要： The present invention provides a chemical mechanical (CMP) polishing pad with a top surface, one or more apertures adapted to receive an endpoint detection window, an underside having a recessed portion and having one or more flanged endpoint detection windows (windows), each window having a flange adapted to fit snugly into the recessed portion of the underside of the polishing layer, the flange having a thickness slightly less than the depth of the recessed portion of the polishing layer (to allow for adhesive), having a detection area that fits snugly into an aperture in the polishing layer so that its top surface that lies substantially flush with the top surface of the polishing layer.
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公开(公告)号：US20190084120A1
公开(公告)日：2019-03-21
申请号：US15705561
申请日：2017-09-15
IPC分类号： B24B37/20 , B24B37/013 , G01B11/06
摘要： The present invention provides a chemical mechanical (CMP) polishing pad with a top surface, one or more apertures adapted to receive an endpoint detection window, an underside having a recessed portion and having one or more flanged endpoint detection windows (windows), each window having a flange adapted to fit snugly into the recessed portion of the underside of the polishing layer, the flange having a thickness slightly less than the depth of the recessed portion of the polishing layer (to allow for adhesive), having a detection area that fits snugly into an aperture in the polishing layer so that its top surface that lies substantially flush with the top surface of the polishing layer.
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公开(公告)号：US20180085891A1
公开(公告)日：2018-03-29
申请号：US15279677
申请日：2016-09-29
IPC分类号： B24B53/017 , B24B37/10 , B24B55/06
摘要： The present invention provides apparati for pre-conditioning polymeric, preferably, porous polymeric, chemical mechanical (CMP) polishing pads or layers and polishing a substrate that comprise a rotary grinder assembly having a rotor with a grinding surface of a porous abrasive material, a flat bed platen for holding the CMP polishing pad or layer in place so that the grinding surface of the rotary grinder is disposed above and parallel to the surface of the flat bed platen to form an interface of the surface of the CMP polishing layer and the porous abrasive material, and a substrate holder located above and parallel to a top surface of the flat bed platen and to which a CMP substrate is attached, thereby creating a polishing interface between the surface of the substrate and the CMP polishing layer wherein the substrate holder rotates independently from the rotary grinder assembly and the flat bed platen.
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公开(公告)号：US09802293B1
公开(公告)日：2017-10-31
申请号：US15279645
申请日：2016-09-29
IPC分类号： B24B53/017 , B24B37/24 , B24D18/00 , B24B53/02 , B24B53/095
CPC分类号： B24B53/017 , B24B37/24 , B24B53/02 , B24B53/095 , B24D18/0009 , B24D18/0045
摘要： The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.
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公开(公告)号：US10861702B2
公开(公告)日：2020-12-08
申请号：US15725936
申请日：2017-10-05
IPC分类号： H01L21/304 , B24B37/00 , B24B37/26 , C09G1/02 , C09K3/14 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/67
摘要： The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The polishing regions are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves extend from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.
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公开(公告)号：US10092998B2
公开(公告)日：2018-10-09
申请号：US15163184
申请日：2016-05-24
发明人： Bainian Qian , Teresa Brugarolas Brufau , Julia Kozhukh , David Michael Veneziale , Yuhua Tong , Diego Lugo , George C. Jacob , Jeffrey B. Miller , Tony Quan Tran , Marc R. Stack , Andrew Wank , Jeffrey James Hendron
IPC分类号： B24D18/00 , B24D11/00 , B24B37/24 , B24B37/04 , B24B53/017
摘要： A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.
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公开(公告)号：US20160375545A1
公开(公告)日：2016-12-29
申请号：US14751385
申请日：2015-06-26
发明人： Bainian Qian , Julia Kozhukh , Teresa Brugarolas Brufau , Diego Lugo , George C. Jacob , Jeffrey B. Miller , Tony Quan Tran , Marc R. Stack , Jeffrey James Hendron
IPC分类号： B24B37/26 , H01L21/306 , B24B53/017 , B24B37/22 , B24B37/24
CPC分类号： B24B37/26 , B24B1/00 , B24B37/044 , B24B37/22 , B24B37/24 , B24B53/017 , B29C70/66 , G02B1/12 , H01F41/00 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.
摘要翻译： 提供一种化学机械抛光垫，其包括：具有抛光表面的抛光层; 其中所述抛光层包括第一连续的非易失性聚合物相和第二非逸散性聚合物相; 其中所述第一连续非易失性聚合物相具有多个周期性凹槽; 其中所述多个周期性凹槽被所述第二非易失性聚合物相占据; 其中所述第一连续非挥发性聚合物相具有≤6vol％的开孔率; 其中所述第二非易失性聚合物相含有≥10vol％的开孔孔隙率; 并且其中所述抛光表面适于抛光基底。
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9.发明授权Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer 有权多层化学机械抛光垫堆叠，具有柔软和可调的抛光层公开(公告)号：US09238296B2
公开(公告)日：2016-01-19
申请号：US13906825
申请日：2013-05-31
发明人： James Murnane , Bainian Qian , John G. Nowland , Michelle K. Jensen , Jeffrey James Hendron , Marty W. DeGroot , David B. James , Fengji Yeh
CPC分类号： B24B37/245 , B24B37/22 , B24B37/24 , B24B53/017 , B24D11/001 , C08G18/3278 , C08G18/6644
摘要： A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
摘要翻译： 提供了一种多层化学机械抛光垫叠层，其包含：抛光层; 刚性层 以及将所述研磨层粘合到所述刚性层的热熔粘合剂; 其中所述抛光层的密度大于0.6g / cm 3; 肖氏D硬度为5〜40; 100％至450％的断裂伸长率; 切割速度为25〜150μm/ hr; 并且其中所述抛光层具有适于抛光所述基底的抛光表面。
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公开(公告)号：US20180361532A1
公开(公告)日：2018-12-20
申请号：US15725876
申请日：2017-10-05
IPC分类号： B24B37/26 , B24B37/04 , H01L21/3105
摘要： The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.
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