公开(公告)号：US09536849B2

公开(公告)日：2017-01-03

申请号：US15097111

申请日：2016-04-12

申请人： Renesas Electronics Corporation

发明人： Akira Yajima ,  Hideki Harano ,  Katsuhiro Torii ,  Hironori Ochi

IPC分类号： H01L21/44 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/11 ,  H01L2224/11019 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/3512

摘要： A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的焊盘电极，形成在焊盘电极上并由铜膜制成的焊接电极，形成在焊后电极上并由含锡的三元合金制成的焊球电极， 端子连接到焊球电极并形成在布线板的前表面上，以及填充半导体衬底和布线板之间的间隙的密封材料。 柱电极包括圆柱形杆部分和位于杆部分的上部中并突出到杆部分的外侧的悬伸部分，焊球电极连接到柱塞电极的上表面上， 并且突出部分，并且杆部分的侧壁在其整个圆周上与密封材料接触。

公开(公告)号：US09972591B2

公开(公告)日：2018-05-15

申请号：US15419069

申请日：2017-01-30

申请人： Renesas Electronics Corporation

发明人： Hideki Harano

IPC分类号： H01L21/44 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L24/11 ,  H01L21/563 ,  H01L23/3142 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/14131 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/92125 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00

摘要： To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a semiconductor substrate having an insulating film in which an opening that exposes each of a plurality of electrode pads is formed is provided, and a flux member including conductive particles is arranged over each of the electrode pads. Thereafter, a solder ball is arranged over each of the electrode pads via the flux member, and is then heated via the flux member so that the solder ball is bonded to each of the electrode pads. The width of the opening of the insulating film is smaller than the width (diameter) of the solder ball.