Abstract:
Methods and apparatuses for separately injecting gases into a reactor for a substrate processing system. The flow profiles of the gases are controlled with two or more sets of adjustable gas flow injectors. The methods are particularly useful for selective deposition of gases in a CVD system using volatile combinations of precursors and etchants. In either case, the gases are provided along separate flow paths that intersect in a relatively open reaction space, rather than in more confined upstream locations.
Abstract:
Methods and apparatuses for separately injecting gases into a reactor for a substrate processing system. The flow profiles of the gases are controlled with two or more sets of adjustable gas flow injectors. The methods are particularly useful for selective deposition of gases in a CVD system using volatile combinations of precursors and etchants. In either case, the gases are provided along separate flow paths that intersect in a relatively open reaction space, rather than in more confined upstream locations.
Abstract:
A thermocouple having at least one inner alignment feature or at least one outer alignment feature, or a combination thereof for positively positioning and aligning at least one thermocouple junction within a bore formed in a susceptor ring of a semiconductor substrate processing reactor. The outer alignment feature is configured to positively align the junction(s) longitudinally within the bore. The inner alignment feature configured to positively position the junction(s) rotationally within the sheath of the thermocouple relative to the bore.
Abstract:
A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
Abstract:
A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.
Abstract:
A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
Abstract:
This invention relates to an apparatus and a method for cooling a semiconductor wafer while it is being transferred from one station to another. More particularly, the invention relates to an active cooling system in the end effecter of a robot used for moving a semiconductor wafer from one process station to another.
Abstract:
An in-line, non-freestanding substrate measurement system is integrated into the substrate fabrication pathway. One embodiment includes a metrology device integrated into a guided vehicle. Another embodiment provides a system for simultaneously measuring both sides of a substrate. A metrology device may be integrated into the front handling chamber of a process tool. Other embodiments provide methods for the measurement of substrates using pathway integrated metrology devices.
Abstract:
A load port comprises a platform for receiving a FOUP. The platform includes features for manually removing a FOUP door. The platform also includes features for placing the FOUP in operative relation to a wafer transfer robot configured to transfer wafers between first and second containers.
Abstract:
A slit valve for a semiconductor processing apparatus, for fluidly sealing a passage connecting two chambers of the apparatus, such as a substrate reaction chamber and a region outside the reaction chamber. The slit valve comprises an actuator plate movable within a slot in one wall of the passage, the actuator plate and the slot oriented generally transverse to the passage. The actuator plate has a first position in which the valve is open, permitting the transfer of a substrate through the passage. The actuator plate also has a second position in which the valve is closed, and in which the actuator plate fluidly seals the passage such that fluid cannot flow through the passage across the actuator plate. A protective cover is configured to prevent debris within the passage (e.g., broken wafers, shards, particulate contaminants, etc.) from flowing into the slot when the actuator plate occupies its second position. In one embodiment, the cover is pivotably secured to the first wall of the passage, proximate the slot. In another embodiment, the cover is secured to the actuator plate, proximate an end thereof. In a preferred embodiment, the cover comprises a plate.